# US 10,871,598 B2 · Solid-state imaging device, production method, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,871,598 B2 - Document ID: US10871598B2 - Status: Granted - Kind: B2 - Application number: 16/585,867 - Filed: 2019-09-27 - Published: 2020-01-23 - Granted: 2020-12-22 - Earliest claimed: 2014-06-03 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Hikaru Iwata - Web page: https://patentgrep.com/patent/US10871598B2 ## CPC - G02B 3/0075: {characterized by non-optical structures, e.g. having integrated holding or alignment means} - G02B 3/0056: {arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses (G02B3/0043 takes precedence; miniaturised objectives for electronic devices employing wafer level optics G02B13/0085)} - G02B 3/0068: {arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements (G02B5/1885, G02B17/002, G02B30/27 take precedence)} - H10F 39/024: {of coatings or optical elements} - H10F 39/182: {Colour image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10F 99/00: Subject matter not provided for in other groups of this subclass - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor. ## Claims ### Claim 1 A solid-state imaging device imaging device, comprising: a pixel array having a plurality of pixels, each pixel including: a color filter; a photoelectric conversion unit; a microlens including a plurality of lens layers; a first film formed between a first lens layer of the plurality of lens layers and a second lens layer of the plurality of lens layers; and a second film formed between the second lens layer and a third lens layer in the plurality of lens layers, wherein each of the first film and the second film and each of the plurality of lens layers is a contiguous and unitary layer that spans across all of the plurality of pixels, wherein light incident to the color filter passes through the plurality of lens layers, the first film, and the second film, and wherein the first film and the second film have a lower refractive index than the plurality of lens layers. ### Claim 2 (depends on 1) The solid-state imaging device according to claim 1, wherein the first film is an oxide film. ### Claim 3 (depends on 1) The solid-state imaging device according to claim 1, wherein the first lens layer is closer to the photoelectric conversion unit than the second lens layer. ### Claim 4 (depends on 2) The solid-state imaging device according to claim 2, wherein the plurality of lens layers are formed of an inorganic material. ### Claim 5 (depends on 4) The solid-state imaging device according to claim 4, wherein the plurality of lens layer are formed of SiN. ### Claim 6 (depends on 4) The solid-state imaging device according to claim 4, wherein the first lens layer is formed of SiN, and the second lens layer is formed of SiON. ### Claim 7 (depends on 1) The solid-state imaging device according to claim 1, wherein the first lens layer is formed of an inorganic material, and the second lens layer is formed of an organic material. ### Claim 8 (depends on 1) The solid-state imaging device according to claim 1, wherein the first film and the second film have a uniform film thickness. ### Claim 9 (depends on 8) The solid-state imaging device according to claim 8, wherein the first film and the second film have a same uniform film thickness. ### Claim 10 (depends on 1) The solid-state imaging device according to claim 1, wherein the first film includes oxide and the first lens layer includes SiN. ### Claim 11 (depends on 10) The solid-state imaging device according to claim 10, wherein the second film includes oxide and the second lens layer and the third lens layer include SiN. ### Claim 12 (depends on 1) The solid-state imaging device according to claim 1, wherein a refractive index difference between the first film and the first lens layer is greater than a refractive index difference between the first film the second lens layer. ### Claim 13 A method of producing a solid-state imaging device including a pixel array having a plurality of pixels, comprising: forming color filters on a substrate; forming a first lens layer on the color filters; and forming a first film on the first lens layer; forming a second lens layer on the first film; and forming a second film on the second lens layer; forming a third lens layer on the second film, wherein each of the first film and the second film and each of the first, second, and third lens layers is a contiguous and unitary layer that spans across all of the plurality of pixels, wherein light incident to the color filters passes through the first, second, and third lens layers, the first film, and the second film, and wherein the first film and the second film have a lower refractive index than the plurality of lens layers. ### Claim 14 An electronic apparatus, comprising: a solid-state imaging device including: a pixel array having a plurality of pixels, each pixel including: a color filter; a photoelectric conversion unit; a microlens including a plurality of lens layers; a first film formed between a first lens layer of the plurality of lens layers and a second lens layer of the plurality of lens layers; and a second film formed between the second lens layer and a third lens layer in the plurality of lens layers, wherein each of the first film and the second film and each of the plurality of lens layers is a contiguous and unitary layer that spans across all of the plurality of pixels, wherein light incident to the color filter passes through the plurality of lens layers, the first film, and the second film, and wherein the first film and the second film have a lower refractive index than the plurality of lens layers. ### Claim 15 (depends on 14) The electronic apparatus according to claim 14, wherein the first film and the second film have a uniform film thickness. ### Claim 16 (depends on 15) The electronic apparatus according to claim 15, wherein the first film and the second film have a same uniform film thickness. ### Claim 17 (depends on 14) The electronic apparatus according to claim 14, wherein the first film and the first lens layer conform to one another. ### Claim 18 (depends on 14) The electronic apparatus according to claim 14, wherein the second film and the second lens layer conform to one another. ### Claim 19 (depends on 14) The electronic apparatus according to claim 14, wherein the first lens layer is thicker than the second lens layer. ### Claim 20 (depends on 14) The electronic apparatus according to claim 14, further comprising: a wiring layer between a substrate that includes the photoelectric conversion unit and the color filters.