# US 10,871,528 B2 · Magnetoresistive effect element and magnetic memory

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- Number: US 10,871,528 B2
- Document ID: US10871528B2
- Status: Granted
- Kind: B2
- Application number: 16/083,202
- Filed: 2017-10-27
- Published: 2019-04-04
- Granted: 2020-12-22
- Earliest claimed: 2017-02-28
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Yohei Shiokawa; Minoru Ota; Tomoyuki Sasaki; Yoshitomo Tanaka
- Web page: https://patentgrep.com/patent/US10871528B2

## CPC

- G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)}
- G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors}
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 13/0002: {using resistive RAM [RRAM] elements}
- H01F 10/3286: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy}
- H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect}
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B 61/20: {comprising components having three or more electrodes, e.g. transistors}
- H10N 35/85: Magnetostrictive active materials
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- H10N 52/00: Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)
- H10N 52/101: {Semiconductor Hall-effect devices}
- H10N 52/80: Constructional details
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10B 61/22: {of the field-effect transistor [FET] type}
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

## Claims

### Claim 1

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other, and
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co, and Ni.

### Claim 2 (depends on 1)

The magnetoresistive effect element according to claim 1, wherein an absolute value of a lattice mismatch ratio between the magnetic coupling layer and the first fixed layer or the second fixed layer is less than or equal to 7%.

### Claim 3 (depends on 1)

The magnetoresistive effect element according to claim 1, wherein the magnetic coupling layer has an fcc structure or an hcp structure, and
each of the first fixed layer and the second fixed layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure.

### Claim 4

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
the magnetization fixed layer further includes a first interposed layer and a second interposed layer stacked between the first fixed layer and the magnetic coupling layer,
the first interposed layer is in contact with the first fixed layer, and the second interposed layer is in contact with the first interposed layer and the magnetic coupling layer,
a main element of the magnetic coupling layer and the first interposed layer is Ir,
a main element of the second interposed layer is an element other than Ir,
a thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of Ir, and
a thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

### Claim 5 (depends on 1)

The magnetoresistive effect element according to claim 1, wherein a thickness of the magnetic coupling layer is less than or equal to 1 nm.

### Claim 6

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and
the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.

### Claim 7 (depends on 1)

The magnetoresistive effect element according to claim 1, wherein at least one of the first fixed layer and the second fixed layer has a stack structure represented by [Co/Pt]n, [Co/Pd]n, or [Co/Ni]n.

### Claim 8 (depends on 1)

The magnetoresistive effect element according to claim 1, wherein the magnetization free layer includes a first free layer and a second free layer formed of a ferromagnetic material, and a magnetic coupling layer formed of a non-magnetic material and stacked between the first free layer and the second free layer, and
the first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other.

### Claim 9 (depends on 1)

The magnetoresistive effect element according to claim 1, further comprising a spin orbit torque interconnect layer disposed such that a spin orbit torque is applied to the magnetization free layer.

### Claim 10 (depends on 1)

A magnetic memory comprising the magnetoresistive effect element according to claim 1 as a storage element.

### Claim 11 (depends on 2)

The magnetoresistive effect element according to claim 2, wherein the magnetic coupling layer has an fcc structure or an hcp structure, and
each of the first fixed layer and the second fixed layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure.

### Claim 12

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
an absolute value of a lattice mismatch ratio between the magnetic coupling layer and the first fixed layer or the second fixed layer is less than or equal to 7%,
the magnetization fixed layer further includes a first interposed layer and a second interposed layer stacked between the first fixed layer and the magnetic coupling layer,
the first interposed layer is in contact with the first fixed layer, and the second interposed layer is in contact with the first interposed layer and the magnetic coupling layer,
a main element of the magnetic coupling layer and the first interposed layer is Ir,
a main element of the second interposed layer is an element other than Ir,
a thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of Ir, and
a thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

### Claim 13

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
the magnetic coupling layer has an fcc structure or an hcp structure,
each of the first fixed layer and the second fixed layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure,
the magnetization fixed layer further includes a first interposed layer and a second interposed layer stacked between the first fixed layer and the magnetic coupling layer,
the first interposed layer is in contact with the first fixed layer, and the second interposed layer is in contact with the first interposed layer and the magnetic coupling layer,
a main element of the magnetic coupling layer and the first interposed layer is Ir,
a main element of the second interposed layer is an element other than Ir,
a thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of Ir, and
a thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

### Claim 14

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
an absolute value of a lattice mismatch ratio between the magnetic coupling layer and the first fixed layer or the second fixed layer is less than or equal to 7%,
the magnetic coupling layer has an fcc structure or an hcp structure,
each of the first fixed layer and the second fixed layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure,
the magnetization fixed layer further includes a first interposed layer and a second interposed layer stacked between the first fixed layer and the magnetic coupling layer,
the first interposed layer is in contact with the first fixed layer, and the second interposed layer is in contact with the first interposed layer and the magnetic coupling layer,
a main element of the magnetic coupling layer and the first interposed layer is Ir,
a main element of the second interposed layer is an element other than Ir,
a thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of Ir, and
a thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

### Claim 15

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
an absolute value of a lattice mismatch ratio between the magnetic coupling layer and the first fixed layer or the second fixed layer is less than or equal to 7%, and
the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.

### Claim 16

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
the magnetic coupling layer has an fcc structure or an hcp structure,
each of the first fixed layer and the second fixed layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure, and
the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.

### Claim 17

A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization fixed layer includes a first fixed layer and a second fixed layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first fixed layer and the second fixed layer,
the first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other,
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
an absolute value of a lattice mismatch ratio between the magnetic coupling layer and the first fixed layer or the second fixed layer is less than or equal to 7%,
the magnetic coupling layer has an fcc structure or an hcp structure,
each of the first fixed layer and the second fixed layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure, and
the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.

### Claim 18 (depends on 4)

The magnetoresistive effect element according to claim 4, wherein the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.

### Claim 19 (depends on 12)

The magnetoresistive effect element according to claim 12, wherein the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.

### Claim 20 (depends on 13)

The magnetoresistive effect element according to claim 13, wherein the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.