# US 10,871,414 B2 · MEMS deposition trap for vacuum transducer protection

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- Number: US 10,871,414 B2
- Document ID: US10871414B2
- Status: Granted
- Kind: B2
- Application number: 15/739,517
- Filed: 2016-06-24
- Published: 2018-06-28
- Granted: 2020-12-22
- Earliest claimed: 2015-06-26
- Assignees: Microgauge AG
- Applicants: microGauge AG
- Inventors: Nina Wojtas
- Web page: https://patentgrep.com/patent/US10871414B2

## CPC

- G01L 19/0636: {using particle filters}
- G01L 21/00: Vacuum gauges
- G01L 27/005: {Apparatus for calibrating pressure sensors}
- G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G)

## Abstract

The present invention relates to a MEMS deposition trap (10) comprising: a manifold layer having manifold inlet channels and manifold outlet channels, a microchannel layer (20) having microchannels (33), wherein the manifold layer and the microchannel layer are bonded together so as to form a fluid path, wherein a fluid is forced to pass through the microchannels (33) when flowing from the manifold inlet channels to the manifold outlet channels. Furthermore, it relates to a vacuum sensor having such a deposition trap as and to a process chamber of a manufacturing equipment, preferably used for thin-film deposition or etching processes, comprising such a vacuum sensor.

## Claims

### Claim 1

A deposition trap, comprising:
a manifold comprising:
a first layer having manifold inlet channels and manifold outlet channels; and
a second layer having channels connecting the manifold inlet channels to the manifold outlet channels,
wherein the first layer and the second layer are bonded together so as to form fluid paths between the manifold inlet channels and the manifold outlet channels,
wherein the fluid paths are configured such that a fluid is forced to pass through the channels of the second layer when flowing from the manifold inlet channels to the manifold outlet channels,
wherein a first manifold inlet channel is formed by two inlet side walls and an inlet end wall connecting the inlet side walls,
wherein the inlet side walls are arranged to form an opening at an inlet side of the deposition trap.

### Claim 2 (depends on 1)

The deposition trap of claim 1, wherein the first layer is interposed between two second layers.

### Claim 3 (depends on 1)

The deposition trap of claim 1, wherein a plurality of first layers and a plurality of second layers are stacked alternately to form the manifold.

### Claim 4 (depends on 1)

The deposition trap of claim 1, wherein a first manifold outlet channel is formed by two outlet side walls and an outlet end wall connecting the outlet side walls, and wherein the outlet side walls are arranged to form an opening at an outlet side of the deposition trap.

### Claim 5 (depends on 1)

The deposition trap of claim 1, wherein the manifold outlet channels are connected to at least one collecting outlet opening of the deposition trap.

### Claim 6 (depends on 5)

The deposition trap of claim 5, wherein the manifold inlet channels, the manifold outlet channels, and the channels of the second layer are formed such that the fluid is forced to change flow direction multiple times when propagating from the manifold inlet channels to the at least one collecting outlet opening.

### Claim 7 (depends on 1)

The deposition trap of claim 1, further comprising at least one inlet opening connected to at least a part of the manifold inlet channels.

### Claim 8 (depends on 1)

The deposition trap of claim 1, wherein at least one of the first layer and the second layer is formed as a respective substrate, and wherein the respective substrate has a base connected to the manifold inlet channels or the manifold inlet channels and the channels of the second layer, respectively.

### Claim 9 (depends on 1)

The deposition trap of claim 1, wherein the deposition trap further comprises a support substrate configured to be connected with an associated part of a vacuum sensor, and wherein the first layer is mounted on the support substrate.

### Claim 10 (depends on 9)

The deposition trap of claim 9, wherein an electrostatic trap is mounted to the support substrate.

### Claim 11 (depends on 1)

The deposition trap of claim 1, wherein the first layer and the second layer are manufactured by silicon bulk micromachining technology.

### Claim 12 (depends on 1)

The deposition trap of claim 1, wherein the first layer and the second layer are manufactured by low temperature co-fired ceramic (LTCC) technology.

### Claim 13 (depends on 1)

The deposition trap of claim 1, further comprising a Peltier cooling element configured to cool the deposition trap.