Gas supply device and valve device
AssigneeTokyo Electron Limited
InventorShigeyuki Okura
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AssigneeTokyo Electron Limited
InventorShigeyuki Okura
Estimating the term…
A technology, when forming a film by supplying TiCl4 gas and NH3 gas a plurality of times in alternation to a substrate, can increase the amount of gas flow while suppressing cooling of a valve device, and contribute to an increase in throughput. In the formation of the film, the gas for atmosphere replacement supplied into a processing vessel between supplying one processing gas and supplying the other processing gas is heated ahead of time. Thus, the flow rate of gas can be increased while suppressing cooling of the gas-contacting sites such as a wafer and the inner wall of the processing vessel, and so it is possible to reduce the time necessary to replace the atmosphere, resulting in being able to contribute to increased throughput, and problems such as adhesion of reaction products due to cooling at the valve device are suppressed.
A valve device in which a first valve body part provided in a first valve chamber and a second valve body part provided in a second valve chamber are successively installed, the device comprising:
A gas supply device for performing a plurality of cycles, each cycle including sequentially supplying a first reaction gas as a first process gas, a substitution gas for substituting an atmosphere, and a second reaction gas as a second process gas into a process vessel, in which a substrate is placed, under a vacuum atmosphere, the gas supply device comprising:
A gas supply device for performing a plurality of cycles, each cycle including sequentially supplying a first reaction gas, a substitution gas for substituting an atmosphere, and a second reaction gas into a process vessel, in which a substrate is placed, under a vacuum atmosphere, the device comprising:
Dependencies are inferred from the claim text.