# US 10,870,916 B2 · Gas supply member and gas processing apparatus

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,870,916 B2
- Document ID: US10870916B2
- Status: Granted
- Kind: B2
- Application number: 15/922,070
- Filed: 2018-03-15
- Published: 2018-09-27
- Granted: 2020-12-22
- Earliest claimed: 2017-03-21
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Kyoko Ikeda
- Web page: https://patentgrep.com/patent/US10870916B2

## CPC

- C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps}
- C23C 16/45546: {specially adapted for a substrate stack in the ALD reactor}
- C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments}
- C23C 16/45578: {Elongated nozzles, tubes with holes}
- C23C 16/4584: {the substrate being rotated}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- H01J 37/3244: {Gas supply means}
- H01J 37/32458: {Vessel}
- H01J 37/32816: {Pressure}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}
- H10P 72/0434: {mainly by convection}
- H10P 72/7621: {characterised by supporting two or more semiconductor substrates}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A gas supply member includes a straight flow path having a straight-line shape and a first end to be supplied with a gas, a gas discharge port branched from the straight flow path and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.

## Claims

### Claim 1

A gas supply member, comprising:
a straight flow path having a straight-line shape and including a first end to be supplied with gas;
a gas discharge port branched from the straight flow path;
a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path; and
a foreign substance accommodation region arranged to face the gas circulation path,
wherein the foreign substance accommodation region is configured by a portion of the gas circulation path that extends in a direction outward of the gas circulation path when viewed in a direction orthogonal to a circulation direction of the gas,
wherein a distal end of the portion is closed so that the foreign substances are accommodated at the distal end,
wherein a wall portion forming the straight flow path has a wave shape, and
wherein a space is formed in the straight flow path from a downstream of the gas discharge port to an entrance of the gas circulation path without being shielded in a direction of the straight flow path.

### Claim 2 (depends on 1)

The gas supply member of claim 1, wherein the straight flow path extends in a vertical direction, the gas circulation path is configured to circulate the gas in the vertical direction, and the foreign substance accommodation region is located at a lower portion of the gas circulation path.

### Claim 3 (depends on 1)

The gas supply member of claim 1, wherein the gas circulation path has an annular shape when viewed in the direction orthogonal to the circulation direction of the gas.

### Claim 4

A gas processing apparatus that performs processing, in a vertical reaction vessel in which a vacuum atmosphere is formed, by heating a plurality of substrates held in a shelf shape on a substrate holder and supplying a processing gas to the substrates, comprising:
a gas supply member including a straight flow path having a straight-line shape along a vertical direction and a first end to be supplied with the processing gas, a gas discharge port branched from the straight flow path and having an opening facing a horizontal direction, a processing gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path and configured to collect foreign substances contained in the processing gas supplied to the straight flow path, and a foreign substance accommodation region arranged to face the processing gas circulation path, wherein the foreign substance accommodation region is configured by a portion of the processing gas circulation path that extends in a direction outward of the processing gas circulation path when viewed in a direction orthogonal to a circulation direction of the processing gas,
wherein a distal end of the portion is closed so that the foreign substances are accommodated at the distal end,
wherein a wall portion forming the straight flow path has a wave shape, and
wherein a space is formed in the straight flow path from a downstream of the gas discharge port to an entrance of the processing gas circulation path without being shielded in a direction of the straight flow path.

### Claim 5 (depends on 4)

The gas processing apparatus of claim 4, wherein the reaction vessel is a double tube including:
an inner tube opened on an upper side; and
an outer tube configured to surround the inner tube and provided with a ceiling of the reaction vessel,
wherein the straight flow path is provided inside the inner tube, and
wherein the processing gas circulation path is provided between an upper end of the inner tube and the ceiling of the outer tube.

### Claim 6 (depends on 5)

The gas processing apparatus of claim 5, wherein the foreign substance accommodation region is provided between a side wall of the inner tube and a side wall of the outer tube.

### Claim 7

A gas processing apparatus that performs processing, in a reaction vessel in which a vacuum atmosphere is formed, by supplying a processing gas to a substrate mounted on one surface side of a rotary table and heating the substrate, comprising:
a gas supply member including a straight flow path having a straight-line shape to extend in a direction intersecting with a rotation direction of the rotary table on one side of the rotary table and a first end to be supplied with the processing gas from, a gas discharge port branched from the straight flow path and having an opening facing the one side of the rotary table, a processing gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the processing gas supplied to the straight flow path, and a foreign substance accommodation region arranged to face the processing gas circulation path,
wherein the foreign substance accommodation region is configured by a portion of the processing gas circulation path that extends in a direction outward of the processing gas circulation path when viewed in a direction orthogonal to a circulation direction of the processing gas,
wherein a distal end of the portion is closed so that the foreign substances are accommodated at the distal end,
wherein a wall portion forming the straight flow path has a wave shape, and
wherein a space is formed in the straight flow path from a downstream of the gas discharge port to an entrance of the processing gas circulation path without being shielded in a direction of the straight flow path.