# US 10,870,797 B2 · Semiconductor nanoparticles, method of producing semiconductor nanoparticles, and light-emitting device

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- Number: US 10,870,797 B2
- Document ID: US10870797B2
- Status: Granted
- Kind: B2
- Application number: 16/717,271
- Filed: 2019-12-17
- Published: 2020-05-07
- Granted: 2020-12-22
- Earliest claimed: 2016-09-06
- Assignees: National University Corporation Nagoya University; Osaka University; Nichia Corporation
- Applicants: National University Corporation Nagoya University; Osaka University; Nichia Corporation
- Inventors: Tsukasa Torimoto; Tatsuya Kameyama; Marino Kishi; Susumu Kuwabata; Taro Uematsu; Daisuke Oyamatsu
- Web page: https://patentgrep.com/patent/US10870797B2

## CPC

- C09K 11/621: {Chalcogenides}
- H10H 20/8512: {Wavelength conversion materials}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/872: {Periodic patterns for optical field-shaping, e.g. photonic bandgap structures}
- Y10S 977/774: Exhibiting three-dimensional carrier confinement, e.g. quantum dots
- Y10S 977/813: Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S 977/892: Liquid phase deposition
- Y10S 977/95: Electromagnetic energy
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.

## Claims

### Claim 1

A semiconductor nanoparticle containing Ag, In, and S; and having an average particle size of 50 nm or less, the semiconductor nanoparticle being adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm, wherein
a ratio of a number of atoms of Ag to a total number of atoms of Ag and In is 0.320 or more and 0.385 or less, and
a ratio of a number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less.

### Claim 2 (depends on 1)

A light-emitting device comprising a light conversion member and a semiconductor light-emitting element, wherein the light conversion member contains a plurality of the semiconductor nanoparticles according to claim 1.

### Claim 3 (depends on 2)

The light-emitting device according to claim 2, wherein the semiconductor light-emitting element is a light-emitting diode chip.

### Claim 4

A core-shell semiconductor nanoparticle comprising:
a core; and
a shell covering a surface of the core, the shell being in heterojunction with the core, wherein
the core is made of a semiconductor that contains Ag, In, and S, wherein a ratio of a number of atoms of Ag to a total number of atoms of Ag and In is 0.320 or more and 0.385 or less, and a ratio of a number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less,
the shell is a semiconductor that consists essentially of a Group 13 element and a Group 16 element, and
in a photoluminescence spectrum obtained when the core-shell semiconductor nanoparticle is irradiated with light having a wavelength in a range of 350 nm to 500 nm, a photoluminescence peak having a peak wavelength in a range of 550 nm to 650 nm and a full width at half maximum of 80 nm or less is observed.

### Claim 5 (depends on 4)

The core-shell semiconductor nanoparticle according to claim 4, wherein the Group 13 element contains Ga and the Group 16 element contains S.

### Claim 6 (depends on 4)

A light-emitting device comprising a light conversion member and a semiconductor light-emitting element, wherein the light conversion member contains a plurality of the core-shell semiconductor nanoparticles according to claim 4.

### Claim 7 (depends on 6)

The light-emitting device according to claim 6, wherein the semiconductor light-emitting element is a light-emitting diode chip.