# US 10,870,581 B2 · Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,870,581 B2
- Document ID: US10870581B2
- Status: Granted
- Kind: B2
- Application number: 16/845,779
- Filed: 2020-04-10
- Published: 2020-07-30
- Granted: 2020-12-22
- Earliest claimed: 2014-09-04
- Assignees: Shin-Etsu Chemical Co., Ltd.
- Applicants: Shin-Etsu Chemical Co., Ltd.
- Inventors: Shigeyoshi Netsu; Naruhiro Hoshino; Tetsuro Okada; Hiroshi Saito
- Web page: https://patentgrep.com/patent/US10870581B2

## CPC

- C01B 33/035: by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
- B01J 19/087: {employing electric or magnetic energy}
- C23C 16/24: Deposition of silicon only
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- B01J 2219/0801: Controlling the process
- B01J 2219/0803: employing electric or magnetic energy
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[S0−SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.

## Claims

### Claim 1

A reaction furnace for producing a polycrystalline silicon by a Siemens method, wherein
the reaction furnace has an in-furnace reaction space in which when an inner cross-sectional area of the reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, is represented by S0, and a total sum of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of the polycrystalline silicon onto at least one pair of silicon core wires in an inverted U shape, which are arranged in the reaction furnace, is represented by SR=ΣSi,
a reaction space cross-sectional area ratio that is defined by S=[S0−SR]/SR satisfies 2.5 or more, based on a final diameter, which is 140 mm or more, of the polycrystalline silicon rod.

### Claim 2 (depends on 1)

An apparatus for producing a polycrystalline silicon, comprising the reaction furnace according to claim 1.

### Claim 3 (depends on 1)

The reaction furnace, according to claim 1, further comprising a source gas supply nozzle for supplying source gas in the in-furnace reaction space, wherein
the source gas supplied from the source gas supply nozzle is controlled such as a composition ratio in wt % between trichlorosilane (TCS) and silicon tetrachloride (STC) in an exhaust gas to 1.2 or more, until a diameter of a polycrystalline silicon rod that is growing reaches 100 mmϕ.