# US 10,870,575 B2 · Stressed decoupled micro-electro-mechanical system sensor

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- Number: US 10,870,575 B2
- Document ID: US10870575B2
- Status: Granted
- Kind: B2
- Application number: 16/024,339
- Filed: 2018-06-29
- Published: 2020-01-02
- Granted: 2020-12-22
- Earliest claimed: 2018-06-29
- Assignees: Infineon Technologies Dresden GmbH
- Applicants: Infineon Technologies Dresden GmbH & Co. KG
- Inventors: Horst Theuss; Bernhard Knott; Thoralf Kautzsch; Mirko Vogt; Maik Stegemann; Andre Roeth; Marco Haubold; Heiko Froehlich; Wolfram Langheinrich; Steffen Bieselt
- Web page: https://patentgrep.com/patent/US10870575B2

## CPC

- B81B 7/0025: {Protection against chemical alteration}
- B81B 7/0045: {for reducing stress inside of the package structure}
- B81B 3/0072: {For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers}
- B81B 7/0032: {Packages or encapsulation (processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023)}
- B81B 7/0048: {between the MEMS die and the substrate}
- B81C 1/00309: {suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound}
- B81C 1/00325: {for reducing stress inside of the package structure}
- H10W 20/43: Layouts of interconnections
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 74/01: Manufacture or treatment
- B81B 2201/02: Sensors
- B81B 2201/0257: Microphones or microspeakers
- B81B 2201/0264: Pressure sensors
- B81B 2203/033: Trenches
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/10: characterised by their shape or disposition
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

## Claims

### Claim 1

A semiconductor device, comprising:
a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device,
wherein the stress decoupling structure includes a set of trenches that are substantially perpendicular to a main surface of the semiconductor device, and
wherein the first region includes a micro-electro-mechanical (MEMS) structure; and
a sealing element to at least partially seal openings of the set of trenches of the stress decoupling structure,
wherein the sealing element includes a cap that includes another stress decoupling structure to decouple the first region and the second region.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the stress decoupling structure further includes a cavity that at least partially separates the first region from the second region.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the cap is formed from silicon or glass.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the cap is affixed to the first region and the second region using a wafer bonding process.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the cap is formed from an elastic material.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, wherein the elastic material at least partially fills the set of trenches of the stress decoupling structure.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, further comprising a molded package including an opening over the MEMS structure.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, further comprising a gel that covers the MEMS structure.

### Claim 9

A micro-electro-mechanical system (MEMS) sensor, comprising:
a first region comprising a MEMS structure;
a second region;
a stress decoupling structure that at least partially decouples the first region and the second region,
wherein the stress decoupling structure includes a set of trenches; and
a sealing element to at least partially seal openings of the set of trenches to prevent penetration of the set of trenches,
wherein the sealing element includes a gel.

### Claim 10 (depends on 9)

The MEMS sensor of claim 9, wherein the stress decoupling structure further includes a cavity that at least partially separates the first region from the second region.

### Claim 11 (depends on 9)

The MEMS sensor of claim 9, wherein the sealing element further includes a gel protection cap.

### Claim 12 (depends on 11)

The MEMS sensor of claim 11, wherein the gel protection cap has an open sidewall.

### Claim 13 (depends on 11)

The MEMS sensor of claim 11, wherein the gel protection cap comprises a same material as the MEMS structure.

### Claim 14 (depends on 9)

The MEMS sensor of claim 9, wherein the gel covers the MEMS structure.

### Claim 15 (depends on 9)

The MEMS sensor of claim 9, wherein a portion of the second region overhangs the set of trenches such that the gel is prevented from entering the set of trenches by the portion of the second region, and
wherein the portion of the second region is a portion of a back-end of line (BEOL) stack of the MEMS sensor.

### Claim 16

A method, comprising:
forming a stress decoupling structure that at least partially decouples a first region of a semiconductor device and a second region of the semiconductor device,
wherein the stress decoupling structure includes a set of trenches that are substantially perpendicular to a main surface of the semiconductor device; and
applying a sealing element that at least partially seals openings of the set of trenches,
wherein the sealing element includes a die attach material.

### Claim 17 (depends on 16)

The method of claim 16, wherein forming the stress decoupling structure comprises:
forming the stress decoupling structure on a surface of the semiconductor device that is opposite to the main surface of the semiconductor device.

### Claim 18 (depends on 17)

The method of claim 17, wherein the first region comprises a micro-electro-mechanical system (MEMS) structure on the main surface of the semiconductor device.

### Claim 19 (depends on 16)

The method of claim 16, wherein the first region comprises a micro-electro-mechanical system (MEMS) structure, and
wherein the method further comprises:
covering the MEMS structure using a gel.

### Claim 20 (depends on 16)

The method of claim 16, wherein forming the stress decoupling structure that at least partially decouples the first region of the semiconductor device and the second region of the semiconductor device comprises:
forming a cavity that at least partially separates the first region from the second region.