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AssigneeThe 13th Research Institute of China Electronics Technology Group Corporation
InventorsJunlong Wang, Zhihong Feng, Dabao Yang, Shixiong Liang, Lisen Zhang, Xiangyang Zhao, Dong Xing, Peng Xu
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An unbalanced terahertz frequency doubler circuit with power handling capacity is provided, and the circuit includes a RF input waveguide, a quartz substrate and a RF output waveguide, where one end of the quartz substrate is disposed in a waveguide groove of the RF input waveguide and the other end of the quartz substrate is disposed in a waveguide groove of the RF output waveguide, where an input transition microstrip is disposed on the quartz substrate, and one end of the transition microstrip is connected to an output transition microstrip sequentially through a first transmission microstrip, a low pass filter, a RF matching microstrip and a second transmission microstrip, where anodes of four GaAs-based terahertz frequency multiplier diode groups are connected to the RF matching microstrip, and a cathode at the outermost position of each of the GaAs-based terahertz frequency multiplier diode groups is connected to a grounding quartz strip.
An unbalanced terahertz frequency doubler circuit with power handling capacity, comprising a RF input waveguide (101), a quartz substrate (102) and a RF output waveguide (103), wherein one end of the quartz substrate (102) is disposed in a waveguide groove of the RF input waveguide (101) and the other end of the quartz substrate (102) is disposed in a waveguide groove of the RF output waveguide (103), wherein an input transition microstrip (104) is disposed on the quartz substrate (102), and one end of the transition microstrip (104) is connected to an output transition microstrip (109) sequentially through a first transmission microstrip (105), a low pass filter (106), a RF matching microstrip (107) and a second transmission microstrip (108), wherein anodes of four GaAs-based terahertz frequency multiplier diode groups (110) are connected to the RF matching microstrip (107), and a cathode at the outermost position of each of the GaAs-based terahertz frequency multiplier diode groups (110) is connected to a grounding quartz strip (111), wherein each of the GaAs-based terahertz frequency multiplier diode groups (110) comprises four Schottky diodes in series connection.
Dependencies are inferred from the claim text.