Method for manufacturing epitaxial silicon wafer and epitaxial silicon wafer

A manufacturing method of an epitaxial silicon wafer, the epitaxial silicon wafer comprising:

• a silicon wafer doped with phosphorus as a dopant and having a resistivity of less than 1.0 mΩ·cm;
• and an epitaxial film formed on the silicon wafer,
• the manufacturing method comprising:
• preparing the silicon wafer comprising a main surface to which a (100) plane is inclined and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 0°5′ to 0°25′ with respect to an axis orthogonal to the main surface;
• annealing the silicon wafer at a temperature from 1200 degrees C. to 1220 degrees C. for 30 minutes or more under argon gas atmosphere;
• prebaking to etch a surface of the silicon wafer after the annealing;
• and
• growing the epitaxial film at a growth temperature ranging from 1100 degrees C. to 1165 degrees C. on the surface of the silicon wafer after the prebaking.