# US 10,865,497 B2 · Manufacturing method of mask

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- Number: US 10,865,497 B2
- Document ID: US10865497B2
- Status: Granted
- Kind: B2
- Application number: 16/472,220
- Filed: 2017-09-28
- Published: 2020-03-19
- Granted: 2020-12-15
- Earliest claimed: 2017-09-28
- Assignees: Sharp Kabushiki Kaisha
- Applicants: Sharp Kabushiki Kaisha
- Inventors: Masahiro Inuzuka
- Web page: https://patentgrep.com/patent/US10865497B2

## CPC

- C23C 14/042: {using masks}
- C23C 14/04: Coating on selected surface areas, e.g. using masks
- C23C 14/16: on metallic substrates or on substrates of boron or silicon
- C23C 14/58: After-treatment
- C25F 3/14: locally
- C25F 7/00: Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects (for both electrolytic coating and removal C25D); Servicing or operating
- H05B 33/10: Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
- H10K 71/166: {using selective deposition, e.g. using a mask}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C25F: PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A manufacturing method of a mask sheet includes a film formation step for forming a metal layer provided with a plurality of openings on a mask substrate, and a shaping step for shaping the metal layer using pulse electrolysis.

## Claims

### Claim 1

A manufacturing method of a mask used when particle are vapor-deposited onto a display device during manufacture, the manufacturing method comprising:
a film formation step for forming a metal layer including a plurality of openings on a mask substrate; and
a shaping step for shaping the metal layer using pulse electrolysis; wherein,
of a first electrode and a second electrode used in the pulse electrolysis, the first electrode is the metal layer to be shaped in the shaping step, and
given a forward current as a current flowing from the second electrode to the first electrode and a reverse current as a current flowing from the first electrode to the second electrode, a current density of the reverse current is greater than a current density of the forward current.

### Claim 2 (depends on 1)

The manufacturing method of a mask according to claim 1,
wherein given a forward time as a time when the forward current is flowing and a reverse time as a time when the reverse current is flowing, the reverse time is shorter than the forward time.

### Claim 3

A manufacturing method of a mask used when particles are vapor-deposited onto a display device during manufacture, the manufacturing method comprising:
a film formation step for forming a metal layer including a plurality of openings on a mask substrate; and
a shaping step for shaping the metal layer using pulse electrolysis; and
a first resist layer formation step for forming a first resist layer provided with a plurality of space portions on the mask substrate; wherein,
the film formation step forms the metal layer including the plurality of openings by removing the first resist layer after formation of the metal layer in the plurality of space portions.

### Claim 4 (depends on 3)

The manufacturing method of a mask according to claim 3,
wherein the film formation step forms the metal layer in the plurality of space portions using direct current electrolysis.

### Claim 5

A manufacturing method of a mask used when particles are vapor-deposited onto a display device during manufacture, the manufacturing method comprising:
a film formation step for forming a metal layer including a plurality of openings on a mask substrate; and
a shaping step for shaping the metal layer using pulse electrolysis; wherein
the shaping step includes a suppressing portion formation step for forming in each of the plurality of openings formed in the film formation step a suppressing portion configured to suppress expansion of the metal layer to inside a predetermined region of the plurality of openings, and a removal step for removing the suppressing portion formed in the suppressing portion formation step, after the shaping step.

### Claim 6 (depends on 5)

The manufacturing method of a mask according to claim 5, further comprising:
a second resist layer formation step for forming, after the film formation step, a second resist layer on the mask substrate and on the metal layer formed in the film formation step; wherein
after the second resist layer formation step, the suppressing portion formation step forms the suppressing portion in the predetermined region by removing portions of the second resist layer other than the predetermined region.