# US 10,865,471 B2 · Cylindrical compact, manufacturing method of cylindrical sputtering target, and manufacturing method of cylindrical sintered compact

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- Number: US 10,865,471 B2
- Document ID: US10865471B2
- Status: Granted
- Kind: B2
- Application number: 15/814,496
- Filed: 2017-11-16
- Published: 2018-03-15
- Granted: 2020-12-15
- Earliest claimed: 2015-03-27
- Assignees: JX Nippon Mining & Metals Corporation
- Applicants: Jx Nippon Mining & Metals Corporation
- Inventors: Yohei Yamaguchi
- Web page: https://patentgrep.com/patent/US10865471B2

## CPC

- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- C04B 35/01: based on oxide ceramics
- C04B 35/453: based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B 35/457: based on tin oxides or stannates
- C23C 14/086: {of zinc, germanium, cadmium, indium, tin, thallium or bismuth}
- C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target}
- H01J 37/3423: {Shape}
- H01J 37/3426: {Material}
- H01J 37/3491: {Manufacturing of targets}
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3293: Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
- C04B 2235/5409: expressed by specific surface values
- C04B 2235/604: Pressing at temperatures other than sintering temperatures
- C04B 2235/608: Green bodies or pre-forms with well-defined density
- C04B 2235/6562: Heating rate
- C04B 2235/6567: Treatment time
- C04B 2235/6585: at an oxygen percentage above that of air
- C04B 2235/77: Density
- C04B 2235/94: Products characterised by their shape
- C04B 2235/963: Surface properties, e.g. surface roughness
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

## Claims

### Claim 1

A manufacturing method of a cylindrical sputtering target, comprising:
sintering a plurality of cylindrical compacts having a relative density of 55.0% or higher and 58.0% or lower and containing ITO or IGZO to form a plurality of cylindrical sintered compacts having a relative density of 99.7% or higher and 99.9% or lower; and
locating the plurality of cylindrical sintered compacts to be adjacent to each other having a difference therebetween in the relative density of 0.1% or smaller,
wherein the relative densities of the plurality of cylindrical sintered compacts are different from each other.

### Claim 2 (depends on 1)

The manufacturing method of a cylindrical sputtering target according to claim 1, further comprising performing cold isostatic pressing at a pressure of 150 MPa or higher and 200 MPa or lower to form the plurality of cylindrical compacts.

### Claim 3 (depends on 1)

The manufacturing method of a cylindrical sputtering target according to claim 1,
wherein the plurality of cylindrical compacts have the relative density of 55.0% or higher and 57.5% or lower.