# US 10,865,361 B2 · Composition for post chemical-mechanical-polishing cleaning > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,865,361 B2 - Document ID: US10865361B2 - Status: Granted - Kind: B2 - Application number: 16/307,191 - Filed: 2017-05-31 - Published: 2019-05-16 - Granted: 2020-12-15 - Earliest claimed: 2016-06-10 - Assignees: BASF SE - Applicants: BASF SE - Inventors: Christian Daeschlein; Max Siebert; Michael Lauter; Leonardus Leunissen; Ivan Garcia Romero; Haci Osman Guevenc; Peter Przybylski; Julian Proelss; Andreas Klipp - Web page: https://patentgrep.com/patent/US10865361B2 ## CPC - C11D 1/721: {End blocked ethers} - C11D 1/722: Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; {Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups (C11D1/721 takes precedence)} - C11D 3/3765: {in liquid compositions} - H05K 3/26: Cleaning or polishing of the conductive pattern - H10P 70/277: {the processing being a planarisation of conductive layers} - C11D 2111/22: Electronic devices, e.g. PCBs or semiconductors - C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R1 and R3 are independently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, R2 is methyl and x and y are an integer, 1 (B)poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5. ## Claims ### Claim 1 A post chemical-mechanical-polishing cleaning composition, comprising: (A) a water-soluble nonionic copolymer which is a block copolymer of formula (I), an alternating copolymer of formula (II), or a random copolymer with units represented in formulas: wherein R1 and R3 are independently hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, and x and y are each independently an integer, a ratio of x to y being in a range of from 0.11 to 9, (B) poly(acrylic acid) or acrylic acid-maleic acid copolymer with a mass average molar mass of up to 10,000 g/mol, and (C) water, wherein a pH of the composition is in a range of from 7.0 to 10.5. ### Claim 2 (depends on 1) The composition of claim 1, wherein the pH is in a range of from 8.0 to 9.0. ### Claim 3 (depends on 1) The composition of claim 1, wherein the copolymer comprises a block copolymer having a mass average molar mass in a range of from 500 to 15,000 g/mol, wherein R1 and R3 are independently hydrogen or methyl, R2 is methyl, and wherein the ratio of x to y is in a range of from 0.25 to 4. ### Claim 4 (depends on 1) The composition of claim 1, wherein the poly(acrylic acid) or acrylic acid-maleic acid copolymer (B) is acrylic acid-maleic acid copolymer with a mass average molar mass of up to 10,000 g/mol. ### Claim 5 (depends on 1) The post chemical mechanical polishing cleaning composition of claim 1, further comprising (D) a corrosion inhibitor. ### Claim 6 (depends on 5) The composition of claim 5, wherein the corrosion inhibitor (D) is at least one selected from the group consisting of acetylcysteine, an N-acyl-sarcosine, an alkylsulfonic acid, an alkyl-aryl sulfonic acid, isophthalic acid, an alkyl phosphate, polyaspartic acid, imidazole, an imidazole derivative, polyethylenimine with a mass average molar mass in a range of from 200 to 2,000 g/mol, a triazole derivative, and an ethylene diamine derivative. ### Claim 7 (depends on 1) The composition of claim 1, further comprising (E) a base. ### Claim 8 (depends on 1) The composition of claim 1, wherein all constituents are in the liquid phase. ### Claim 9 (depends on 1) The composition of claim 1, which is suitable for a) removing residues and contaminants from a substrate, and/or b) cleaning of semiconductor devices. ### Claim 10 (depends on 1) The composition of claim 1, which is a ready-to-use post chemical-mechanical-polishing cleaning composition, comprising: (A) a total amount of the water-soluble nonionic copolymer in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition; and (B) a total amount of the poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer in a range of from 0.001 to 0.15 wt.-%, based on the total weight of the composition. ### Claim 11 (depends on 1) The composition of claim 1, which is a post chemical-mechanical-polishing (post-CMP) cleaning composition concentrate, comprising: (A) a total amount of the water-soluble nonionic copolymer in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition; and (B) a total amount of the poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer in a range of from 0.1 to 7.5 wt.-%, based on the total weight of the composition. ### Claim 12 (depends on 1) A cobalt post chemical-mechanical-polishing cleaner, comprising: the composition of claim 1. ### Claim 13 (depends on 1) A process for the manufacture of a semiconductor device from a semiconductor substrate, the process comprising: removing residues and contaminants from a surface of the semiconductor substrate by contacting it at least once with the composition of claim 1. ### Claim 14 (depends on 13) The process of claim 13, further comprising: chemical-mechanical-polishing the semiconductor substrate. ### Claim 15 (depends on 1) A method, comprising: cleaning a substrate comprising cobalt with the composition of claim 1. ### Claim 16 (depends on 1) A method, comprising: removing residues and contaminants from a surface of a semiconductor substrate comprising cobalt or a cobalt alloy with the composition of claim 1. ### Claim 17 (depends on 1) The composition of claim 1, comprising no quaternary ammonium cation. ### Claim 18 (depends on 1) The composition of claim 1, having a sodium cation concentration of less than 500 ppm. ### Claim 19 (depends on 1) The composition of claim 1, wherein the nonionic water soluble copolymer (A) has a mass average molar mass (Mw) in a range of from 2000 to 10000 g/mol. ### Claim 20 (depends on 1) The composition of claim 1, comprising the acrylic acid-maleic acid copolymer, wherein the nonionic water soluble copolymer (A) is a block copolymer with a central propyleneoxide block flanked by two polyethyleneglycol blocks.