# US 10,865,343 B2 · Plasma etching method

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- Number: US 10,865,343 B2
- Document ID: US10865343B2
- Status: Granted
- Kind: B2
- Application number: 16/538,134
- Filed: 2019-08-12
- Published: 2020-02-13
- Granted: 2020-12-15
- Earliest claimed: 2018-08-13
- Assignees: Ajou University Industry-Academic Cooperation Foundation
- Applicants: Ajou University Industry—Academic Cooperation Foundation
- Inventors: Chang-Koo Kim; Jun-Hyun Kim; Jin-Su Park
- Web page: https://patentgrep.com/patent/US10865343B2

## CPC

- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- H10P 50/283: {by chemical means}
- H10P 50/73: {using masks for insulating materials}
- H10P 72/0421: {for drying etching}
- Y02C 20/30: of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y02C: CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.

## Claims

### Claim 1

A plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas, and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target,
wherein the plasma chamber is connected to a canister containing heptafluoropropyl methyl ether (HFE) in a liquid phase by a chamber connecting line, and
wherein the supplying comprises:
generating the HFE gas by heating the canister at a first temperature higher than a boiling point of the HFE and heating the chamber connecting line at a second temperature higher than the first temperature, and
supplying the generated HFE gas to the plasma chamber through the chamber connecting line.

### Claim 2 (depends on 1)

The plasma etching method of claim 1, wherein the heptafluoropropyl methyl ether gas and the argon gas are supplied to the plasma chamber at a flow rate ratio in a range of 1:2 to 1:4.

### Claim 3 (depends on 2)

The plasma etching method of claim 2, wherein the heptafluoropropyl methyl ether gas and the argon gas are supplied to the plasma chamber at a flow rate ratio of 1:2.

### Claim 4 (depends on 1)

The plasma etching method of claim 1, wherein the heptafluoropropyl methyl ether gas and the oxygen gas are supplied to the plasma chamber at a flow rate ratio in a range of 9:1 to 8:2.

### Claim 5 (depends on 4)

The plasma etching method of claim 4, wherein the heptafluoropropyl
methyl ether gas and the oxygen gas are supplied to the plasma chamber at a flow rate ratio of 8:2.

### Claim 6 (depends on 1)

The plasma etching method of claim 1, wherein the etching target includes silicon oxide.

### Claim 7 (depends on 1)

The plasma etching method of claim 1, wherein the etching target includes silicon oxide, wherein a hole pattern mask is disposed on the etching target, wherein the plasma etching allows the etching target to have a high aspect ratio etched structure.

### Claim 8 (depends on 1)

The plasma etching method of claim 1, wherein the argon gas is supplied to the plasma chamber through an argon gas injection line different from the chamber connecting line, and the oxygen gas is supplied to the plasma chamber through an oxygen gas injection line different from the chamber connecting line.