# US 10,865,152 B2 · Polycrystalline diamond compact

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- Number: US 10,865,152 B2
- Document ID: US10865152B2
- Status: Granted
- Kind: B2
- Application number: 16/352,830
- Filed: 2019-03-14
- Published: 2019-07-11
- Granted: 2020-12-15
- Earliest claimed: 2017-05-09
- Assignees: Sf Diamond Co., Ltd.
- Applicants: Sf Diamond Co., Ltd.
- Inventors: Caili Wang; Dongpeng Zhao; Saifei Yang; Haijiang Fang
- Web page: https://patentgrep.com/patent/US10865152B2

## CPC

- C04B 37/028: {by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch}
- C22C 26/00: Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes}
- E21B 10/46: characterised by wear resisting parts, e.g. diamond inserts
- E21B 10/567: with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
- E21B 10/5676: {having a cutting face with different segments, e.g. mosaic-type inserts}
- C04B 2237/363: Carbon
- C04B 2237/401: Cermets
- C04B 2237/68: Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- E21B: EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS

## Abstract

A polycrystalline diamond compact including a cemented carbide substrate and a polycrystalline diamond layer bonded to the cemented carbide substrate. The cemented carbide substrate is cylindrical and includes a circumferential wall. The polycrystalline diamond layer includes a central part including between 8 and 15 wt. % of cobalt and an outer part including between 0.5 and 2 wt. % of cobalt. The outer part is a columnar ring belt and includes a chamfer. The outer part includes an upper surface, a side surface connected to the circumferential wall of the cemented carbide substrate, and a chamfer surface connecting the upper surface and the side surface. The chamfer includes a first terminal connected to the upper surface of the outer part and a second terminal connected to the side surface of the outer part.

## Claims

### Claim 1

A polycrystalline diamond compact, comprising:
a cemented carbide substrate; and
a polycrystalline diamond layer bonded to the cemented carbide substrate;
wherein:
the cemented carbide substrate is cylindrical and comprises a circumferential wall;
the polycrystalline diamond layer comprises a central part comprising between 8 and 15 wt. % of cobalt and an outer part comprising between 0.5 and 2 wt. % of cobalt;
the outer part is a columnar ring belt and comprises a chamfer;
the outer part comprises an upper surface, a side surface connected to the circumferential wall of the cemented carbide substrate, and a chamfer surface connecting the upper surface and the side surface;
the chamfer comprises a first terminal connected to the upper surface of the outer part and a second terminal connected to the side surface of the outer part;
a vertical distance between the upper surface of the outer part and the second terminal of the chamfer is between 0.3 and 1.0 mm;
a vertical distance between a middle point of the first terminal and the second terminal and the central part is between 0.35 and 1.0 mm;
an axial height of the outer part is between 1.2 and 2.2 mm; and
a vertical distance between the side surface of the outer part and the first terminal of the chamfer is between 0.2 and 0.6 mm.

### Claim 2 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein a width of the columnar ring belt of the outer part is between 1.8 and 2 mm.

### Claim 3

A polycrystalline diamond compact, comprising:
a cemented carbide substrate; and
a polycrystalline diamond layer bonded to the cemented carbide substrate, the polycrystalline diamond layer consisting of a central part and an outer part;
wherein:
the cemented carbide substrate is cylindrical and comprises a circumferential wall;
the central part comprises between 8 and 15 wt. % of cobalt;
the outer part comprises between 0.5 and 2 wt. % of cobalt;
the outer part is a columnar ring belt and comprises a chamfer;
the outer part comprises an upper surface, a side surface connected to the circumferential wall of the cemented carbide substrate, and a chamfer surface connecting the upper surface and the side surface;
the chamfer comprises a first terminal connected to the upper surface of the outer part and a second terminal connected to the side surface of the outer part;
a vertical distance between the upper surface of the outer part and the second terminal of the chamfer is between 0.3 and 1.0 mm;
a vertical distance between a middle point of the first terminal and the second terminal and the central part is between 0.35 and 1.0 mm;
an axial height of the outer part is between 1.2 and 2.2 mm; and
a vertical distance between the side surface of the outer part and the first terminal of the chamfer is between 0.2 and 0.6 mm.

### Claim 4 (depends on 3)

The polycrystalline diamond compact of claim 3, wherein a width of the columnar ring belt of the outer part is between 1.8 and 2 mm.