# US 10,865,106 B2 · Semiconductor controlled quantum interaction gates

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- Number: US 10,865,106 B2
- Document ID: US10865106B2
- Status: Granted
- Kind: B2
- Application number: 16/445,645
- Filed: 2019-06-19
- Published: 2019-12-26
- Granted: 2020-12-15
- Earliest claimed: 2018-06-20
- Assignees: Equal1.Labs Inc.
- Applicants: equal1.labs Inc.
- Inventors: Dirk Robert Walter Leipold; George Adrian Maxim; Michael Albert Asker
- Web page: https://patentgrep.com/patent/US10865106B2

## CPC

- H10D 48/383: {Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 15/00: Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
- G02F 1/01725: {Non-rectangular quantum well structures, e.g. graded or stepped quantum wells}
- G06F 1/20: Cooling means
- G06F 11/0724: {in a multiprocessor or a multi-core unit (multiprocessors per se G06F15/80)}
- G06F 11/0751: {Error or fault detection not based on redundancy (power supply failures G06F1/30; network fault management H04L41/06)}
- G06F 11/0793: {Remedial or corrective actions (recovery from an exception in an instruction pipeline G06F9/3861; by retry G06F11/1402; for recovering from a failure of a protocol instance or entity H04L69/40)}
- G06F 15/16: Combinations of two or more digital computers each having at least an arithmetic unit, a program unit and a register, e.g. for a simultaneous processing of several programs {(coordinating program control therefor G06F9/52; in regulating and control system G05B)}
- G06N 5/01: Dynamic search techniques; Heuristics; Dynamic trees; Branch-and-bound
- G06N 10/20: Models of quantum computing, e.g. quantum circuits or universal quantum computers
- G06N 10/40: Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
- G06N 10/70: Quantum error correction, detection or prevention, e.g. surface codes or magic state distillation
- G06N 99/00: Subject matter not provided for in other groups of this subclass
- G11C 19/32: using super-conductive elements
- H03K 3/38: by the use, as active elements, of superconductive devices
- H03K 19/195: using superconductive devices
- H03M 1/34: Analogue value compared with reference values (H03M1/48 takes precedence)
- H03M 1/66: Digital/analogue converters ({H03M1/001 – } H03M1/10 take precedence)
- H03M 13/1575: {Direct decoding, e.g. by a direct determination of the error locator polynomial from syndromes and subsequent analysis or by matrix operations involving syndromes, e.g. for codes with a small minimum Hamming distance}
- H10D 30/014: {of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors}
- H10D 30/0243: {using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability}
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 48/3835: {Semiconductor qubit devices comprising a plurality of quantum mechanically interacting semiconductor quantum dots, e.g. Loss-DiVincenzo spin qubits}
- H10D 48/385: {Devices using spin-polarised carriers}
- H10D 62/121: {oriented parallel to substrates}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 62/812: {Single quantum well structures}
- H10D 62/8171: {Doping structures, e.g. doping superlattices or nipi superlattices}
- H10D 64/27: Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D 84/84: Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10N 60/11: {Single-electron tunnelling devices}
- H10N 60/128: {having three or more electrodes, e.g. transistor-like structures}
- H10N 69/00: Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
- H10P 14/3822: {Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}
- G02F 1/01791: {Quantum boxes or quantum dots}
- G11C 11/44: using super-conductive elements, e.g. cryotron
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H03M: CODING; DECODING; CODE CONVERSION IN GENERAL (using fluidic means F15C4/00; optical analogue/digital converters G02F7/00; coding, decoding or code conversion, specially adapted for particular applications, see the relevant subclasses, e.g. G01D, G01R, G06F, G06T, G09G, G10L, G11B, G11C, H04B, H04L, H04M, H04N; ciphering or deciphering for cryptography or other purposes involving the need for secrecy G09C)
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

## Claims

### Claim 1

A quantum interaction gate, comprising:
a substrate;
a first qubit, including:
a first substantially continuous well constructed on said substrate;
a first control gate constructed over said first well separating said first well into a first quantum dot and a second quantum dot;
wherein a first potential applied to said first control gate is operative to control a first local depleted tunneling path connecting said first quantum dot and said second quantum dot;
a second qubit, comprising:
a second substantially continuous well constructed on said substrate;
a second control gate constructed over said second well separating said second well into a third quantum dot and a fourth quantum dot;
wherein a second potential applied to said second control gate is operative to control a second local depleted tunneling path connecting said third quantum dot and said fourth quantum dot; and
wherein said first quantum dot and said third quantum dot are in sufficient proximity to each other to enable interaction between a first particle and a second particle respectively therein.

### Claim 2 (depends on 1)

The quantum interaction gate according to claim 1, wherein said interaction is electrostatic.

### Claim 3 (depends on 1)

The quantum interaction gate according to claim 1, wherein said first particle and said second particle comprise electrons.

### Claim 4 (depends on 1)

The quantum interaction gate according to claim 1, further comprising one or more additional control gates constructed over said first well thereby separating said first well into one or more additional qdots.

### Claim 5 (depends on 1)

The quantum interaction gate according to claim 1, wherein said first control gate and said second control gate control movement of said first particle and said second particle within their respective qubit quantum interaction gates.

### Claim 6 (depends on 1)

The quantum interaction gate according to claim 1, wherein said first and second particles are injected into said second qdot and said fourth qdot that are located sufficiently far away from each other resulting in sufficiently low interaction therebetween.

### Claim 7 (depends on 1)

The quantum interaction gate according to claim 1, wherein a duration of said interaction between said first qdot and said third qdot determines a quantum operation performed by said first qubit and said second qubit.

### Claim 8 (depends on 1)

The quantum interaction gate according to claim 1, wherein said interaction is reduced or stops when said first particle moves sufficiently far enough away from said second particle.

### Claim 9 (depends on 1)

The quantum interaction gate according to claim 1, wherein subsequent to interaction, said first and second particles are moved away from each other.

### Claim 10 (depends on 1)

The quantum interaction gate according to claim 1, wherein said first qubit and said second qubit are constructed using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through an oxide layer, a planar quantum structure using tunneling through a local depleted well, a 3D quantum structure using tunneling through an oxide layer, and a 3D quantum structure using tunneling through a local depleted fin.

### Claim 11 (depends on 1)

The quantum interaction gate according to claim 1, wherein said first qubit and said second qubit are configured to provide operation selected from a group consisting of: controlled NOT gate, controlled-controlled NOT, Tofolli gate, quantum annealing interaction gate, controlled quantum SWAP interaction gate, controlled Pauli interaction gate, quantum ancilla interaction gate.

### Claim 12

A quantum interaction gate, comprising:
a substrate;
a depleted layer fabricated on said substrate;
a first qudit having one or more control gates fabricated on said depleted layer to form a first plurality of qdots including one interaction qdot;
a second qudit having one or more control gates fabricated on said depleted layer to form a second plurality of qdots including one interaction qdot; and
wherein said interaction qdots of said first and second qudits are located closer to each other compared to all other first and second plurality of qdots so as to enable interaction between particles located therein.

### Claim 13 (depends on 12)

The quantum interaction gate according to claim 12, further comprising a circuit operative to inject said particles into initialization qdots of said first qudit and said second qudit that are located sufficiently far away from each other to substantially prevent interaction therebetween.

### Claim 14 (depends on 12)

The quantum interaction gate according to claim 12, wherein appropriate control signals are applied to said first qudit and said second qudit to move said particles to said interaction qdots.

### Claim 15 (depends on 12)

The quantum interaction gate according to claim 12, wherein a duration of said interaction determines the particular quantum operation performed by said first qudit and said second qudit.

### Claim 16 (depends on 12)

The quantum interaction gate according to claim 12, wherein subsequent to interaction, at least one of said particles is moved away from said interaction qdots thereby reducing or stopping said interaction.

### Claim 17 (depends on 12)

The quantum interaction gate according to claim 12, wherein said first qudit and said second qudit are constructed using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through an oxide layer, a planar quantum structure using tunneling through a local depleted well, a 3D quantum structure using tunneling through an oxide layer, and a 3D quantum structure using tunneling through a local depleted fin.

### Claim 18 (depends on 12)

The quantum interaction gate according to claim 12, wherein said first qudit and said second qudit are configured to provide operation selected from a group consisting of: controlled NOT gate, controlled-controlled NOT, Tofolli gate, quantum annealing interaction gate, controlled quantum SWAP interaction gate, controlled Pauli interaction gate, quantum ancilla interaction gate.

### Claim 19 (depends on 12)

The quantum interaction gate according to claim 12, further comprising a circuit operative to inject a first particle into an initialization qdot within said first qudit and a second particle into an initialization qdot within said second qudit wherein a distance between said initialization qdots are sufficiently far apart resulting in sufficiently low interaction between said first particle and said second particle.

### Claim 20

A quantum interaction gate, comprising:
a substrate;
a depleted well fabricated on said substrate;
a plurality of qudits, each qudit including one or more control gates fabricated on said depleted well to form a plurality of qdots including one interaction qdot, wherein each control gate functions to form a qdot on either side thereof for holding a quantum state of at least one particle; and
wherein said one interaction qdot in at least two qudits are located closer to each other compared to a remaining plurality of qdots so as to enable quantum interaction between particles located in said one interaction qdot in at least two qudits.

### Claim 21

A method of quantum interaction, comprising:
providing a substrate;
fabricating a depleted layer over said substrate;
fabricating on said depleted layer a first qudit having a first plurality of qdots and associated control gates including an interaction qdot;
fabricating on said depleted layer a second qudit having a second plurality of qdots and associated control gates including an interaction qdot;
wherein each qdot of said first plurality of qdots is formed on a side of an associated control gate in said first qudit and each qdot of said second plurality of qdots is formed on a side of an associated control gate in said second qudit; and
wherein said interaction qdots are located sufficiently closer to each other compared to all other qdots in said first and second qudits so as to enable interaction between two particles located therein.

### Claim 22 (depends on 21)

The method according to claim 21, further comprising injecting a first particle into an initialization qdot within said first qudit and a second particle into an initialization qdot within said second qudit wherein a distance between said initialization qdots are sufficiently far apart resulting in sufficiently low interaction between said first particle and said second particle.

### Claim 23 (depends on 22)

The method according to claim 22, further comprising transporting said first particle and/or said second particle through one or more staging qdots in said respective first qudit and said second qudit to said respective interaction qdots to permit relatively strong quantum interaction therebetween.

### Claim 24 (depends on 23)

The method according to claim 23, further comprising transporting, after quantum interaction is complete, said first particle and said second particle away from each other through said one or more staging qdots to a relatively larger distance to prevent further interaction therebetween.

### Claim 25 (depends on 21)

The method according to claim 21, wherein said first qudit and said second qudit are fabricated using a semiconductor process selected from a group consisting of: a planar quantum structure using tunneling through an oxide layer, a planar quantum structure using tunneling through a local depleted well, a 3D quantum structure using tunneling through an oxide layer, and a 3D quantum structure using tunneling through a local depleted fin.

### Claim 26 (depends on 21)

The method according to claim 21, wherein said first qudit and said second qudit are configured to provide operation selected from a group consisting of: controlled NOT gate, controlled-controlled NOT, Tofolli gate, quantum annealing interaction gate, controlled quantum SWAP interaction gate, controlled Pauli interaction gate, quantum ancilla interaction gate.