# US 10,864,557 B2 · System for cleaning wafer in CMP process of semiconductor manufacturing fabrication > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,864,557 B2 - Document ID: US10864557B2 - Status: Granted - Kind: B2 - Application number: 15/464,525 - Filed: 2017-03-21 - Published: 2017-07-06 - Granted: 2020-12-15 - Earliest claimed: 2015-03-31 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Chia-Ying Tien; Chia-Lin Hsueh - Web page: https://patentgrep.com/patent/US10864557B2 ## CPC - H10P 70/237: {the processing being a planarisation of insulating layers} - B08B 1/12: Brushes - B08B 1/14: Wipes; Absorbent members, e.g. swabs or sponges (with integrated means for dispensing fluids B08B1/40) - B08B 1/34: rotating about an axis parallel to the surface - B08B 1/52: using fluids - B08B 3/12: by sonic or ultrasonic vibrations - B24B 37/20: Lapping pads for working plane surfaces - B24B 37/34: Accessories - H10P 70/277: {the processing being a planarisation of conductive layers} - H10P 72/0406: {for cleaning followed by drying, rinsing, stripping, blasting or the like} - H10P 72/0412: {using mainly scrubbing means, e.g. brushes} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ## Abstract A system for performing a Chemical Mechanical Polishing (CMP) process is provided. The system includes a CMP module configured to polish a semiconductor wafer. The system further includes a cleaning brush assembly configured to clean the semiconductor wafer. The cleaning brush includes a rotation shaft and a brush member surrounding a segment of the rotation shaft. The system also includes an agitation transducer arranged to be distant from the brush member and configured to produce an agitated cleaning liquid to clean the cleaning brush assembly. ## Claims ### Claim 1 A system for performing a Chemical Mechanical Polishing (CMP) process, the system comprising: a CMP module configured to polish a semiconductor wafer; and a cleaning module, comprising: a cleaning brush assembly configured to clean the semiconductor wafer and comprising a rotation shaft and a brush member surrounding a segment of the rotation shaft; a cleaning liquid source configured to supply a cleaning liquid; and an agitation transducer fluidly connected to the cleaning liquid source and configured to agitate the cleaning liquid from the cleaning liquid source with sonic energy to produce an agitated cleaning liquid to clean the cleaning brush assembly, wherein the agitation transducer is arranged to be distant from and outside the brush member, and an outlet of the agitation transducer faces the brush member so as to apply the agitated cleaning liquid to an outer surface of the brush member. ### Claim 2 (depends on 1) The system as claimed in claim 1, further comprising a cleaning tank, wherein the cleaning brush assembly is positioned in the cleaning tank, and the agitation transducer is positioned in the cleaning tank and on a side panel of a cleaning tank. ### Claim 3 (depends on 2) The system as claimed in claim 2, wherein the cleaning module comprises a plurality of agitation transducers, and the agitation transducers are positioned on the side panel of the cleaning tank. ### Claim 4 (depends on 1) The system as claimed in claim 1, wherein the cleaning brush assembly rotates about a rotation axis, and the agitation transducer extends along a direction parallel to the rotation axis and has a length that is greater than the diameter of the semiconductor wafer to be cleaned. ### Claim 5 (depends on 1) The system as claimed in claim 1, wherein the agitation transducer supplies the agitated cleaning liquid at an angle from about 0 degrees to about 180 degrees relative to a rotation axis about which the cleaning brush assembly rotates. ### Claim 6 (depends on 1) The system as claimed in claim 1, further comprising a signal generator electrically connected to the agitation transducer and configured to transmit a signal to the agitation transducers to enable oscillation of the agitation transducer. ### Claim 7 (depends on 1) The system as claimed in claim 1, further comprising two wafer supports configured to vertically support the semiconductor wafer. ### Claim 8 (depends on 1) The system as claimed in claim 1, wherein the cleaning liquid from the cleaning liquid source is supplied to the cleaning brush assembly through the agitation transducer. ### Claim 9 (depends on 1) The system as claimed in claim 1, wherein the agitation transducer and the cleaning brush assembly are located on a same side of the semiconductor wafer. ### Claim 10 (depends on 1) The system as claimed in claim 1, wherein the brush member comprises a sponge. ### Claim 11 A system for performing a Chemical Mechanical Polishing (CMP) process, the system comprising: a CMP module configured to polish a semiconductor wafer; and a cleaning module, comprising: a cleaning brush assembly configured to clean the semiconductor wafer and comprising a rotation shaft and a brush member surrounding a segment of the rotation shaft; and an agitation transducer connected to the rotation shaft, circumferentially surrounding a segment of the rotation shaft which is not covered by the brush member, and configured to agitate a cleaning liquid in the rotation shaft. ### Claim 12 (depends on 11) The system as claimed in claim 11, wherein a main flow path is formed in the rotation shaft for facilitating the flow of the agitated cleaning liquid, and a plurality of holes are formed on an outer wall of the rotation shaft and communicate with the main flow path. ### Claim 13 (depends on 11) The system as claimed in claim 11, wherein the main flow path is parallel to a rotation axis about which the rotation shaft rotates. ### Claim 14 (depends on 11) The system as claimed in claim 11, wherein an end of the brush member is distant from the agitation transducer. ### Claim 15 (depends on 11) The system as claimed in claim 11, further comprising a signal generator electrically connected to the agitation transducer and configured to transmit a signal to the agitation transducers to enable oscillation of the agitation transducer. ### Claim 16 (depends on 11) The system as claimed in claim 11, further comprising two wafer supports configured to vertically support the semiconductor wafer. ### Claim 17 A system for performing a Chemical Mechanical Polishing (CMP) process, the system comprising: a CMP module configured to polish a semiconductor wafer; and a first cleaning module and a second cleaning module positioned adjacent to the first cleaning module, and each comprising: a cleaning brush assembly configured to clean the semiconductor wafer and comprising a rotation shaft and a brush member surrounding a segment of the rotation shaft; a cleaning liquid source configured to supply a cleaning liquid; and an agitation transducer fluidly connected to the cleaning liquid source and configured to agitate the cleaning liquid from the cleaning liquid source with sonic energy to produce an agitated cleaning liquid to clean the cleaning brush assembly, wherein the agitation transducer is arranged to be distant from and outside the brush member, and an outlet of the agitation transducer faces the brush member so as to apply the agitated cleaning liquid to an outer surface of the brush member. ### Claim 18 (depends on 17) The system as claimed in claim 17, wherein the cleaning brush assembly rotates about a rotation axis, and the agitation transducer extends along a direction parallel to the rotation axis and has a length that is greater than the diameter of the semiconductor wafer to be cleaned. ### Claim 19 (depends on 17) The system as claimed in claim 17, wherein each of the first cleaning module and the second cleaning module further comprising a cleaning tank, wherein the cleaning brush assembly is positioned in the cleaning tank, and the agitation transducer is positioned in the cleaning tank and on a side panel of a cleaning tank. ### Claim 20 (depends on 17) The system as claimed in claim 17, wherein the agitation transducer supplies the agitated cleaning liquid at an angle from about 0 degrees to about 180 degrees relative to a rotation axis about which the cleaning brush assembly rotates.