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US 10,861,721 B2Granted
Apparatus and method for processing wafer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYou-Hua Chou, Min-Hao Hong, Kuan-Chung Chen
Life of this patent
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Abstract
A method includes delivering a wafer into a process chamber, applying a thermal energy to the wafer by a heat source, and moving the heat source substantially along a longitudinal direction of the heat source with respect to the wafer. An apparatus that performs the method is also disclosed.
Claims20
A method, comprising:
- delivering a wafer into a process chamber;
- applying a thermal energy to the wafer by a lamp of a heat source;
- and
- moving the lamp of the heat source substantially along a longitudinal direction of the lamp of the heat source with respect to the wafer, wherein moving the lamp of the heat source comprises moving a movable portion that is coupled to the heat source and that is telescopically and movably received in a stationary portion.
1 more element
A method, comprising:
- delivering a wafer into a process chamber;
- applying thermal energy to the wafer by a heat source;
- rotating the heat source using a spherical joint, wherein the spherical joint includes a ball socket and a connecting element that has a first straight portion and a ball-shaped end directly connected to the first straight portion and in the ball socket;
- and
- moving the heat source substantially along a longitudinal direction of the heat source.
2 more elements
A method, comprising:
- delivering a wafer into a process chamber;
- applying a thermal energy to the wafer by a heat source, wherein the heat source is connected to a pivot and a lift pin;
- and
- linearly moving the lift pin to cause the heat source to rotate with respect to the pivot, such that the linear motion of the lift pin directly results in the rotational motion of the heat source.
1 more element
Dependencies are inferred from the claim text.