Device and method for generating random numbers
AssigneePolitecnico Di Milano
InventorsDaniele Ielmini, Simone Balatti, Stefano Ambrogio
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Abstract
The invention relates to a device for generating random numbers, comprising a pair of memristors. The pair of memristors comprises a first and a second memristor, each memristor of the pair in turn comprises a top electrode, a bottom electrode and an intermediate layer adapted to switch resistance in response to predetermined voltage values applied between the top electrode and the bottom electrode. Each memristor is operatively connected to an output terminal by means of its bottom electrode. A control logic is connected to the memristors for applying suitable voltages necessary to determine a change of resistance in at least one memristor of the pair.
Claims9
A device for generating random numbers, comprising:
- a pair of memristors comprising a first and a second memristor, each memristor of the pair comprising a top electrode, a bottom electrode and an intermediate layer adapted to switch resistance in response to predetermined voltage values applied between the top electrode and the bottom electrode;
- an output terminal operatively connected to said pair of memristors;
- and
- a control logic adapted to apply a transition voltage at the ends of each memristor in order to cause a change of resistance in the memristor;
- wherein each memristor is operatively connected to the output terminal by means of its bottom electrode;
- and
- and wherein the control logic is configured to:
- fix the voltage of the output terminal to a predetermined value and apply said transition voltage to cause a change of resistance in at least one memristor of the pair, leave the voltage at said output terminal floating and apply to the top electrodes of said first and second memristor two read voltages having opposite sign and amplitude lower than said transition voltage.
A method for generating random numbers, wherein a random number is generated by using a statistical variation of an electric resistance of at least one memristor of a pair of memristors, said pair of memristors comprising a first and a second memristor, each memristor of the pair comprising a top electrode, a bottom electrode and an intermediate layer adapted to switch resistance in response to predetermined voltage values applied between the top electrode and the bottom electrode, the method comprising:
- causing a change of resistance in at least one memristor of the pair by applying to said at least one memristor a transition voltage;
- reading a voltage value at an output terminal operatively connected to said pair of memristors;
- and
- associating a number to the voltage value of the output terminal;
- wherein each memristor of the pair is operatively connected to the output terminal by means of its bottom electrode;
- and
- further comprising:
- fixing the voltage of the output terminal to a predetermined value and applying said transition voltage to cause a change of resistance in at least one memristor of the pair;
- and
- leaving the voltage at said output terminal floating and apply to the top electrodes of said first and second memristor two read voltages having opposite sign and amplitude lower than said transition voltage.
Dependencies are inferred from the claim text.