Multilayer thin films exhibiting perpendicular magnetic anisotropy

A method for forming a CoFeSiB/Pd multilayer thin film exhibiting perpendicular magnetic anisotropy, the method comprising:

• alternate sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form the [CoFeSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber, and performing a post-deposition annealing after forming the [CoFeSiB/Pd] multilayer thin film;
• wherein a number of times the [CoFeSiB/Pd] multilayer thin film is stacked is 3 or more;
• wherein the method further comprises forming a buffer layer before forming the [CoFeSiB/Pd] multilayer thin film, wherein the buffer layer is Pd and has a thickness of 3 nm or more;
• wherein the post-deposition annealing temperature is 400 degrees Celsius or more;
• and
• wherein the [CoFeSiB/Pd] multilayer film has a squareness of 90 percent or more, a saturation magnetization of 300 emu/cm3 or more, an effective magnetic anisotropy energy of 1.0×106 erg/cm3 or more, and a coercivity of 3 kOe or more.