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AssigneeSony Corporation
InventorsYoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
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The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
A light detecting device, comprising:
A method of manufacturing a light detecting device, comprising:
A method of manufacturing a light detecting device, comprising:
Dependencies are inferred from the claim text.
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Applied to dark current: by using optical black pixels
Anti-reflection coatings: having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
Constructional details: optical parts specially adapted for electronic image sensors; Mounting thereof
For transforming different wavelengths into image signals: colour separation based on photon absorption depth, e.g. full colour resolution…
About 9 years 1 month of term left · ends 17 Nov 2035 (estimated)
The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus, and in particular, to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture.
In a solid-state imaging device, a so-called moth-eye structure, in which a fine uneven structure is provided on a boundary surface on a light-receiving surface side of a silicon layer in which a photodiode is formed, has been proposed as a structure for preventing reflection of incident light (for example, see Patent Documents 1 and 2).
Patent Document 1: Japanese Patent Application Laid-Open No. 2010-272612
FIG. 1 is a diagram illustrating a schematic structure of a solid-state imaging device according to the present disclosure.
FIG. 2 is a diagram illustrating an exemplary cross-sectional structure of a pixel according to a first embodiment.
FIG. 3 is a diagram for describing a method for manufacturing a pixel.
Modes for carrying out the present disclosure (hereinafter, referred to as embodiments) will be described below. The description will be given in the following order.
1. Exemplary Schematic Structure of Solid-state Imaging Device
2. Pixel Structure according to First Embodiment (Pixel Structure including Anti-reflection Portion and Inter-pixel Light-blocking Portion)