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US 10,855,288 B2Granted
Logic design with unipolar memristors
AssigneeTechnion Research & Development Foundation Limited
InventorsShahar Kvatinsky, Avishay Drori, Elad Amrani
Life of this patent
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Abstract
Logic gates are made from first and second resistive elements connected together to form a voltage divider. One or both of the resistive elements is a unipolar memristor. OR and NOT gates may be constructed to make a digital logic system.
Claims5
Logic gate apparatus, comprising:
- a first resistive element;
- and
- a second resistive element;
- wherein the first and second resistive elements are connected together to form a voltage divider and one of said first and second resistive elements comprises a unipolar memristor, and said second resistive element comprises a resistance connected in series with the unipolar memristor so as to form a section of a NOT gate, the logic apparatus further comprising a first capacitor connected in parallel with the unipolar memristor, and a second capacitor connected in parallel with the resistance.
1 more element
Digital logic apparatus, comprising a plurality of logic gates, each gate comprising at least one unipolar memristor, wherein at least one of said gates is a NOT gate, and said NOT gate comprises:
- a unipolar memristor;
- a resistance connected in series with the unipolar memristor so as to form a section of a NOT gate;
- and
- a first capacitor connected in parallel with the unipolar memristor, and a second capacitor connected in parallel with the resistance.
1 more element
Dependencies are inferred from the claim text.