Multi-level turn-off circuit and related methods

A circuit comprising:

• a first N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) comprising a first gate and a first current terminal, the first current terminal adapted to be coupled to a switch;
• a second N-channel MOSFET comprising a second gate and a second current terminal, the second current terminal coupled to the first gate;
• a voltage-current-voltage buffer coupled to the first gate and to the second current terminal;
• a comparator circuit coupled to the second gate and to the voltage-current-voltage buffer;
• and a capacitor coupled to the first gate and to the second current terminal.

A system comprising:

• a first switch adapted to be coupled to a load;
• and
• a gate driver integrated device adapted to be coupled to the first switch, the gate driver integrated device comprising:
• an over-current protection circuit configured to determine whether a current associated with the first switch satisfies an over-current threshold;
• and
• an output stage circuit, the output stage circuit configured to, in response to the over-current protection circuit determining that the current satisfies the over-current threshold:
• reduce a first gate voltage of the first switch from a first voltage to a second voltage by reducing a second gate voltage of a second switch from a third voltage to a fourth voltage;
• reduce the first gate voltage from the fourth voltage to a fifth voltage by turning on a first transistor;
• and
• in response to a pre-determined time period elapsing, turn off the first switch by turning on a second transistor.