Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorMotoki Imanishi
Life of this patent
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Abstract
A semiconductor device includes: a first IGBT and a second IGBT to constitute an inverter; a primary-side IC chip to output an electrical signal responsive to an input signal; a first secondary-side IC chip to drive the first IGBT based on the electrical signal; and a second secondary-side IC chip to drive the second IGBT based on the electrical signal. The primary-side IC chip includes insulating elements electrically insulated from the first secondary-side IC chip and the second secondary-side IC chip. The first secondary-side IC chip is stacked on the first IGBT. The second secondary-side IC chip is stacked on the second IGBT.
Claims6
A semiconductor device comprising:
- a high-side switching element and a low-side switching element to constitute an inverter;
- a primary-side IC chip to output an electrical signal responsive to an input signal;
- a first secondary-side IC chip to drive the high-side switching element based on the electrical signal;
- and
- a second secondary-side IC chip to drive the low-side switching element based on the electrical signal, wherein
- the primary-side IC chip includes an insulating element electrically insulated from the first secondary-side IC chip and the second secondary-side IC chip,
- the first secondary-side IC chip is stacked on the high-side switching element,
- the second secondary-side IC chip is stacked on the low-side switching element, and
- at least one of the following:
- the first secondary-side IC chip is stacked on a surface of an emitter electrode of the high-side switching element, and
- the second secondary-side IC chip is stacked on a surface of an emitter electrode of the low-side switching element.
Dependencies are inferred from the claim text.