Transistor level input and output harmonic terminations
AssigneeCree, Inc.
InventorsFrank Trang, Zulhazmi Mokhti, Guillaume Bigny
Life of this patent
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Abstract
A transistor device includes a transistor cell comprising a channel region, a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode, and a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device.
Claims20
A transistor device, comprising:
- a semiconductor substrate;
- a transistor cell on the semiconductor substrate, the transistor cell comprising a channel region;
- a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode;
- and
- a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device,
- wherein the gate runner extends on the semiconductor substrate, and
- wherein the harmonic termination circuit extends on the semiconductor substrate and the gate runner.
A transistor device, comprising:
- a semiconductor substrate;
- a plurality of source regions and a plurality of drain regions alternately arranged on the semiconductor substrate;
- and
- a harmonic termination circuit comprising a wiring layer on the semiconductor substrate, wherein the harmonic termination circuit is electrically connected between an input of the transistor device and a gate electrode that is between adjacent ones of the source regions and the drain region,
- wherein the harmonic termination circuit comprises a capacitive element on the semiconductor substrate.
A radio frequency (RF) transistor device, comprising:
- a plurality of RF transistor cells on a semiconductor substrate, each of the plurality of RF transistor cells comprising a gate electrode and a drain electrode;
- an RF input manifold connected to the gate electrode of respective ones of the RF transistor cells;
- an RF output manifold connected to the drain electrode of respective ones of the RF transistor cells;
- and
- a harmonic termination circuit on the semiconductor substrate, wherein the harmonic termination circuit is electrically connected to a connective runner on the semiconductor substrate at a position on the connective runner that is between at least one of the RF transistor cells and the RF output manifold or is between the at least one of the RF transistor cells and the RF input manifold, and
- wherein the harmonic termination circuit extends on the semiconductor substrate and the connective runner.
Dependencies are inferred from the claim text.