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US 10,855,230 B2Granted
FET operational temperature determination by field plate resistance thermometry
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsSimon John Mahon, Allen W. Hanson, Bryan Schwitter, Chuanxin Lian, Rajesh Baskaran, Frank Gao
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Abstract
Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
Claims26
A field-effect transistor with temperature sensing comprising:
- a gate;
- a source contact;
- a drain contact;
- a source field plate coupled to the source contact;
- a first pair of contact tabs connected to the source field plate and separated by a first distance for applying a probe current through the source field plate;
- and
- a second pair of contact tabs connected to the source field plate and separated by a second distance for sensing a voltage across a region of the source field plate through which the probe current flows.
4 more elements
A method of operating a field-effect transistor, the method comprising:
- applying a signal to a gate of the field-effect transistor;
- amplifying the signal with the field-effect transistor;
- applying a probe current to a region of a source field plate of the field-effect transistor, wherein the source field plate is coupled to a source contact of the field-effect transistor;
- and
- sensing a voltage produced by the probe current.
2 more elements
Dependencies are inferred from the claim text.