US 10,855,051 B2 · Semiconductor light source and method for manufacturing a semiconductor light source

Abstract

What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.

Claims19

Dependent claims

A method for manufacturing a semiconductor light source comprising a substrate, a layer sequence arranged above the substrate comprising a light-emitting layer and an upper boundary layer arranged above the light-emitting layer, a horizontal alignment mark and vertical alignment marks, comprising:

patterning the layer sequence in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe extending in parallel thereto at the same time;
applying a cover layer on the patterned layer sequence;
removing a first part of the cover layer in order to expose the alignment stripe as the horizontal alignment mark, and second parts of the cover layer in order to expose, on both sides of the light-emitting stripe, regions of the layer sequence spaced apart from a light-entrance edge or a light-exit edge of the semiconductor light source, as vertical alignment marks, at the same time.

A semiconductor light source comprising:

a substrate, a patterned layer sequence arranged above the substrate comprising a light-emitting layer and an upper boundary layer arranged above the light-emitting layer, a horizontal alignment mark and vertical alignment marks,
wherein the patterned layer sequence comprises a light-emitting stripe which defines the semiconductor light source, and an alignment stripe extending in parallel thereto;
a cover layer on the patterned layer sequence;
wherein the cover layer is open over a first part of the patterned layer sequence so that the alignment stripe as a horizontal alignment mark is exposed, and
wherein the cover layer is open over second parts of the patterned layer sequence so that, on both sides of the light-emitting stripe, regions of the layer sequence arranged to be spaced apart from a light-entrance edge or a light-exit edge of the semiconductor light source, are exposed as vertical alignment marks.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor light source and method for manufacturing a semiconductor light source

Life of this patent

Semiconductor light source and method for manufacturing a semiconductor light source

Life of this patent

Abstract

Claims19