Photoelectric devices and image sensors and electronic devices

An image sensor, comprising:

• a photoelectric device, the photoelectric device including
• a first electrode and a second electrode facing each other, and
• a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer configured to electrically convert one of blue light, green light, or red light,
• wherein the photoelectric conversion layer includes
• a first semiconductor associated with an absorption spectrum of a first peak absorption wavelength, and
• a second semiconductor associated with an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by about 100 nm or greater, the second semiconductor forming a pn junction with the first semiconductor.

An image sensor, comprising:

• a semiconductor substrate;
• and
• a plurality of photoelectric devices on the semiconductor substrate, the plurality of photoelectric devices configured to convert different ones of blue light, green light, or red light into electric signals, respectively, each photoelectric device of the plurality of photoelectric devices including
• a first electrode and a second electrode facing each other, and
• a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer configured to electrically convert a third light of blue light, green light, or red light,
• wherein the photoelectric conversion layer includes
• a first semiconductor associated with an absorption spectrum of a first peak absorption wavelength, the first peak absorption wavelength being in one wavelength spectrum of a blue wavelength spectrum, a green wavelength spectrum, and a red wavelength spectrum, and
• a second semiconductor associated with an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by about 100 nm or greater.