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US 10,854,831 B2Granted
Thin film transistor including a pair of auxiliary structures corresponding to source/drain and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsAjeong Choi, Youngjun Yun, Yong Uk Lee, Suk Gyu Hahm
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Abstract
A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.
Claims14
A thin film transistor comprising
- a substrate;
- a pair of auxiliary structures on the substrate,
- the pair of auxiliary structures including a first auxiliary structure and a second auxiliary structure facing each other;
- the first auxiliary structure including a lower surface and an upper surface facing each other, the lower surface of the first auxiliary structure facing a surface of the substrate,
- the second auxiliary structure including a lower surface and an upper surface facing each other, the lower surface of the second auxiliary structure facing the surface of the substrate,
- an active layer on the substrate, the active layer including an organic semiconductor that is contiguous between the first auxiliary structure and a second auxiliary structure;
- a gate electrode overlapped by the active layer;
- and
- a source electrode and a drain electrode electrically connected to the active layer so a portion of the source electrode and a portion of the drain electrode are arranged overlying the active layer,
- wherein one edge of the active layer contacts at least a part of the upper surface of the first auxiliary structure and another edge of the active layer contacts at least a part of the upper surface of the second auxiliary structure, and
- the active layer is continuously formed between the first auxiliary structure and the second auxiliary structure.
8 more elements
A thin film transistor comprising
- a substrate;
- a gate electrode on the substrate;
- a pair of auxiliary structures on the substrate, the pair of auxiliary structures including a first auxiliary structure spaced apart from a second auxiliary structure;
- the first auxiliary structure including a lower surface and an upper surface facing each other, the lower surface of the first auxiliary structure facing a surface of the substrate,
- the second auxiliary structure including a lower surface and an upper surface facing each other, the lower surface of the second auxiliary structure facing the surface of the substrate,
- an active layer on the substrate, the active layer including an organic semiconductor between the first auxiliary structure and the second auxiliary structure;
- a source electrode and a drain electrode electrically connected to the active layer so a portion of the source electrode and a portion of the drain electrode are arranged overlying the active layer;
- a gate insulating layer on the substrate, the gate insulating layer between the active layer and the gate electrode, the gate insulating layer extending between the gate electrode and the pair of auxiliary structures;
- and
- a surface treatment layer on the substrate, the surface treatment layer between the active layer and the gate insulating layer, the surface treatment layer between the first auxiliary structure and the second auxiliary structure,
- wherein one edge of the active layer contacts at least a part of the upper surface of the first auxiliary structure and another edge of the active layer contacts at least a part of the upper surface of the second auxiliary structure, and
- the active layer is continuously formed between the first auxiliary structure and the second auxiliary structure.
9 more elements
Dependencies are inferred from the claim text.