Systems and methods for gated-insulator reconfigurable non-volatile memory devices
AssigneeUniversity of Cincinnati
InventorsRashmi Jha, Andrew Rush, Eric Herrmann
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Abstract
Systems and methods of use and fabrication are described for a non-volatile resistive random access memory (RRAM) multi-terminal device including a first electrode, a second electrode, a metal oxide disposed between the first electrode and the second electrode, and an at least first gate configured to apply a voltage bias to change a resistive state in the metal oxide.
Claims20
A multi-terminal resistive random access memory (RRAM) device comprising:
- a first electrode;
- a second electrode;
- a metal oxide defining a conduction path positioned and disposed between the first electrode and the second electrode;
- and
- an at least first gate configured to apply a voltage bias to change a resistive state in the metal oxide, such that, based on a polarity of the voltage bias applied, the resistive state in the conductance path is switched between a low resistance state (LRS) and a high resistance state (HRS) in the conduction path.
A crossbar array including one or more non-volatile multi-terminal resistive random access memory (RRAM) devices for a neuromorphic application, the crossbar array comprising:
- at least one non-volatile multi-terminal RRAM device positioned as a crosspoint device between an input bar and an output bar of the crossbar array, wherein at least one non-volatile multi-terminal RRAM device comprises a top electrode, a bottom electrode, a metal oxide defining a conduction path disposed therebetween, and an at least first gate configured to apply a voltage bias to change a resistive state based on movement of oxygen ions in the conduction path to switch the resistive state between the first electrode and the second electrode between a low resistance state (LRS) and a high resistance state (HRS);
- a pre-neuron device integrated into the input bar of the crossbar array;
- and
- a post-neuron device integrated into the output bar of the crossbar array, wherein the resistance state of the at least one non-volatile multi-terminal RRAM device is configured to affect behavior of post-neuron device.
A non-volatile resistive random access memory (RRAM) device comprising:
- a first electrode;
- a second electrode;
- a metal oxide defining a conduction path positioned and disposed between the first electrode and the second electrode;
- and
- an at least first gate configured to apply a voltage bias to change a resistive state based on movement of oxygen ions in the conduction path to switch the resistive state between the first electrode and the second electrode between a low resistance state (LRS), and a high resistance state (HRS) or provide an analog state reconfiguration based on an intermediate distribution of oxygen vacancies.
Dependencies are inferred from the claim text.