Formation of correlated electron material (CEM) devices with restored sidewall regions
AssigneeArm Limited
InventorsPaul Raymond Besser, Ming He, Jolanta Bozena Celinska
Life of this patent
Estimating the term…
Abstract
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may include removing of an exposed portion of a CEM film to form an exposed sidewall region bordering a remaining unexposed portion of the CEM film under or beneath a conductive overlay. The method may further include at least partially restoring properties of the exposed sidewall region to a CEM via exposure of the exposed sidewall region to one or more gaseous annealing agents.
Claims23
A method of constructing a switching device, comprising:
- removing a portion of a conductive overlay disposed over a correlated electron material (CEM) film, the CEM film comprising a bulk material having a reversible backdonation property enabling the CEM film to transition between impedance states;
- removing a portion of the CEM film that was disposed under the removed portion of the conductive overlay to form an exposed sidewall region;
- and
- applying a dopant comprising a substitutional ligand to the exposed sidewall region to at least partially restore the reversible backdonation property to the exposed sidewall region.
A method of fabricating a switching device, comprising:
- removing an exposed portion of a correlated electron material (CEM) film to form an exposed sidewall region bordering a remaining unexposed portion of the CEM film under a conductive overlay, the CEM film comprising a bulk material having a reversible backdonation property enabling the CEM film to transition between impedance states;
- and
- applying a dopant comprising a substitutional ligand to the exposed sidewall region to at least partially restore the backdonation property of the exposed sidewall region.
A switching device, comprising:
- one or more layers of a correlated electron material (CEM) film disposed over a conductive substrate, the one or more layers of the CEM film comprising a bulk material having a substitutional ligand to impart a reversible backdonation property enabling the CEM film to transition between impedance states, the one or more layers of the CEM film having a sidewall region;
- a conductive overlay disposed over the one or more layers of the CEM film;
- and
- a sealing layer disposed over the sidewall region, the conductive substrate, and the conductive overlay, the sealing layer to encapsulate the conductive overlay, the one or more layers of CEM and the conductive substrate, and to impede diffusion of the substitutional ligand from the one or more layers of the CEM film.
Dependencies are inferred from the claim text.