Method for producing an optoelectronic component and optoelectronic component

An optoelectronic component comprising:

• a light-emitting semiconductor chip comprising an epitaxially grown layer sequence having a p-doped semiconductor region, an n-doped semiconductor region and an active zone, the n-doped semiconductor region facing an emission side of the light-emitting semiconductor chip;
• a p-contact point and an n-contact point, both arranged on the same side of the light-emitting semiconductor chip and remote from the emission side of the light-emitting semiconductor chip;
• a mirror layer arranged on the p-doped semiconductor region facing away from the n-doped semiconductor region;
• and
• a converter element arranged on the n-doped semiconductor region and facing away from the p-doped semiconductor region,
• wherein the converter element is anodically bonded to the epitaxially grown layer sequence.

A method for producing an optoelectronic component, the method comprising:

• providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence;
• arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier;
• detaching the sapphire substrate from the light-emitting semiconductor chip;
• applying a converter element on a region of the light-emitting semiconductor chip in which the sapphire substrate was detached, wherein the converter element is anodically bonded to the epitaxially grown layer sequence;
• arranging the light-emitting semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier;
• and
• detaching the carrier from the light-emitting semiconductor chip.