Contact configuration for optoelectronic device

A method of fabricating an optoelectronic device comprising:

• forming a mesa having a mesa boundary over a first portion of an n-type semiconductor layer, wherein the mesa includes an active semiconductor layer and a p-type semiconductor contact layer located on an opposite side of the active semiconductor layer as the n-type semiconductor layer, and wherein the n-type semiconductor layer has an n-type contact region located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, wherein the n-type contact region is at least partially defined by the mesa boundary;
• forming at least one scattering element in the n-type semiconductor layer;
• depositing a first n-type metallic contact layer over a first portion of the n-type contact region in proximity to the mesa boundary;
• and
• depositing a second n-type metallic contact layer over a second portion of the n-type contact region, wherein the first n-type metallic contact layer is formed of a first metal and the second metallic contact layer is formed of a second metal, wherein the first metal is distinct from the second metal.