Manufacturable thin film gallium and nitrogen containing devices integrated with silicon electronic devices

A method for manufacturing a semiconductor device, the method comprising:

• providing a substrate having a surface region;
• forming a first material overlying the surface region, the first material comprising a release material overlying the substrate and at least an intrinsic-type or unintentionally doped gallium and nitrogen containing region overlying the release material or at least an n-type gallium and nitrogen containing region overlying the release material or at least a p-type gallium and nitrogen containing region overlying the release material or at least a combination of one or more of the n-type gallium and nitrogen containing region, the p-type gallium and nitrogen containing region, and the intrinsic-type or unintentionally doped gallium and nitrogen containing region overlying the release material;
• patterning the first material and forming mesas to form a plurality of dies arranged in an array, each die corresponding to a plurality of semiconductor devices and being arranged by a first pitch between adjacent dies in the array;
• forming an interface region overlying the first material, the interface region comprising a metal, a semiconductor, a dielectric, oxide, glass, or a polymer;
• subjecting the release material to an energy source to fully or partially remove the release material, the release material disposed between the surface region and the one or more of the n-type gallium and nitrogen containing region, the p-type gallium and nitrogen containing region, and the intrinsic-type or unintentionally doped gallium and nitrogen containing region, wherein fully or partially removing the release material leaves undercuts between the surface region and the one or more of the n-type gallium and nitrogen containing region, the p-type gallium and nitrogen containing region, and the intrinsic-type or unintentionally doped gallium and nitrogen containing region;
• bonding the interface region to a carrier wafer to form a bonded structure, while maintaining the release material completely or partially removed from the bonded structure;
• releasing the plurality of dies provided on the substrate to transfer the plurality of dies to the carrier wafer;
• processing at least one of the plurality of dies to form the plurality of semiconductor devices, wherein the carrier wafer comprises silicon and includes circuitry for integration with at least some of the plurality of semiconductor devices, and the plurality of semiconductor devices include at least one of:
• one or more transistor devices, one or more light emitting devices, one or more power diode devices, or combinations thereof.

A method for manufacturing a semiconductor device, the method comprising:

• providing a substrate having a surface region;
• forming a first material overlying the surface region, the first material comprising a release material overlying the substrate and at least an intrinsic-type or unintentionally doped gallium and nitrogen containing region overlying the release material or at least an n-type gallium and nitrogen containing region overlying the release material or at least a p-type gallium and nitrogen containing region overlying the release material or at least a combination of one or more of the n-type gallium and nitrogen containing region, the p-type gallium and nitrogen containing region, and the intrinsic-type or unintentionally doped gallium and nitrogen containing region overlying the release material;
• patterning the first material and forming mesas to form a plurality of first dies arranged in an array, each first die corresponding to a plurality of first semiconductor devices and being arranged by a first pitch between adjacent first dies in the array;
• forming an interface region overlying the first material, the interface region comprising a metal, a semiconductor, a dielectric, oxide, glass, or a polymer;
• subjecting the release material to an energy source to fully or partially remove the release material, the release material disposed between the surface region and the one or more of the n-type gallium and nitrogen containing region, the p-type gallium and nitrogen containing region, and the intrinsic-type or unintentionally doped gallium and nitrogen containing region, wherein fully or partially removing the release material leaves undercuts between the surface region and the one or more of the n-type gallium and nitrogen containing region, the p-type gallium and nitrogen containing region, and the intrinsic-type or unintentionally doped gallium and nitrogen containing region;
• bonding the interface region to a carrier wafer to form a bonded structure, while maintaining the release material completely or partially removed from the bonded structure;
• releasing the plurality of first dies provided on the substrate to transfer the plurality of first dies to the carrier wafer;
• processing at least one of the plurality of first dies to form the plurality of first semiconductor devices, wherein the carrier wafer comprises silicon and includes circuitry for integration with at least some of the plurality of semiconductor devices;
• and
• transferring a plurality of second dies to the carrier wafer, each second die corresponding to a plurality of second semiconductor devices, each second die comprising GaAs, AlAs, AlGaAs, InGaAs, InGaP, AlInGaP, AlInGaAs, or AlInGaAsP.