Method of manufacturing semiconductor light emitting device
AssigneeNikkiso Co., Ltd.
InventorsKazushige Igarashi, Noritaka Niwa, Tetsuhiko Inazu
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Abstract
A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; dry-etching portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; causing nitrogen atoms (N) to react with the partial region of the n-type clad layer exposed; and forming an n-side electrode on the partial region of the n-type clad layer that the nitrogen atoms are caused to react with.
Claims4
A method of manufacturing a semiconductor light emitting device comprising:
- forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer made of n-type AlGaN having a molar fraction of AlN of 20% or higher;
- forming a p-type semiconductor layer on the active layer;
- dry-etching portions of the p-type semiconductor layer, the active layer, and the n-type clad layer by using a gas including chlorine (Cl) so as to expose a partial region of the n-type clad layer;
- and
- causing nitrogen atoms (N) produced by thermally decomposing ammonia (NH3) to react with the partial region of the n-type clad layer exposed while supplying only ammonia and heating the n-type clad layer at a temperature not less than 100° C. and not more than 1000° C.;
- and
- forming an n-side electrode on the partial region of the n-type clad layer that the nitrogen atoms are caused to react with.
Dependencies are inferred from the claim text.