US 10,854,770 B2Granted

Avalanche photo-transistor

AssigneeArtilux, Inc.

InventorYun-Chung Na

Life of this patent

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Abstract

Methods and devices for an avalanche photo-transistor. In one aspect, an avalanche photo-transistor includes a detection region configured to absorb light incident on a first surface of the detection region and generate one or more charge carriers in response, a first terminal in electrical contact with the detection region and configured to bias the detection region, an interim doping region, a second terminal in electrical contact with the interim doping region and configured to bias the interim doping region, a multiplication region configured to receive the one or more charge carriers flowing from the interim doping region and generate one or more additional charge carriers in response, a third terminal in electrical contact with the multiplication region and configured to bias the multiplication region, wherein the interim doping region is located in between the detection region and the multiplication region.

Claims10

Dependent claims

A device comprising:

a detection region configured to:
absorb light incident on a first surface of the detection region;
and
generate one or more charge carriers in response to absorbing the incident light;
a first terminal in electrical contact with the detection region and configured to bias the detection region;
an interim doping region, having a doping concentration of a first type dopant that is greater than a threshold doping concentration;
a second terminal in electrical contact with the interim doping region and configured to bias the interim doping region;
a multiplication region configured to:
receive the one or more charge carriers flowing from the interim doping region;
and
generate one or more additional charge carriers in response to receiving the one or more charge carriers;
and
a third terminal in electrical contact with the multiplication region and configured to bias the multiplication region,
wherein the interim doping region is located in between the detection region and the multiplication region.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/405,153Filed 7 May 2019 · us provisional application
Priority: 7 May 2018
Published: US 2019/0341517 A17 Nov 2019
Granted: 1 Dec 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10F 30/245
The devices having only two potential barriers, e.g. bipolar phototransistors: bipolar phototransistors
G02B 5/003
Optical elements other than lenses: light absorbing elements
H10F 30/2255
The potential barrier working in avalanche mode, e.g. avalanche photodiodes: in which the active layers form heterostructures, e.g. SAM structures
H10F 30/24
The devices being sensitive to infrared, visible or ultraviolet radiation: the devices having only two potential barriers, e.g. bipolar…