Solar cell and method for manufacturing the same

A method for manufacturing a solar cell comprising:

• forming a tunneling layer entirely on a first surface of a semiconductor substrate;
• forming a first conductive type area and a second conductive type area on the tunneling layer,
• wherein the first conductive type area and the second type area are deposited directly on the tunneling layer;
• separately forming a barrier area to separate the first conductive type area and the second conductive type area;
• forming a front surface field layer having a conductive type the same as the base area and having a high doping concentration higher than the base area on a second surface of the semiconductor substrate;
• forming a passivation layer formed on the first and second conductive type areas and the barrier area;
• forming a first electrode connected to the first conductive type area by penetrating a first contact hole of the passivation layer and a second electrode connected to the second conductive type area by penetrating a second contact hole of the passivation layer,
• wherein the first conductive type area comprises amorphous silicon, microcrystalline silicon, or polycrystalline silicon including the first conductive type dopant,
• wherein the second conductive type area comprises amorphous silicon, microcrystalline silicon, or polycrystalline silicon including the second conductive type dopant;
• wherein the barrier area comprises amorphous silicon, microcrystalline silicon, or polycrystalline silicon being intrinsic,
• wherein the first conductivity type area and the second conductivity type area have a continuously uniform thickness, and the barrier layer also has a continuously uniform thickness, and
• the barrier area has the thickness greater than the thickness of the first and second conductive areas.