Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a drift layer of a first conductivity type formed on the semiconductor substrate;
• a plurality of pillar regions of a second conductivity type formed in the drift layer;
• a surface electrode formed on the drift layer including the plurality of pillar regions;
• and
• a plurality of withstand voltage holding structures of a second conductivity type formed in a surface layer of the drift layer including the plurality of pillar regions to surround an active region, wherein
• each of the plurality of pillar regions has a linear shape extending in parallel with each other and provided to have a striped shape extending in parallel with a direction of an off-angle of the semiconductor substrate,
• each of the plurality of withstand voltage holding structures has a frame-like shape including sides extending in parallel with the plurality of pillar regions and sides perpendicular to the plurality of pillar regions in a planar view,
• in at least two of the plurality of withstand voltage holding structures adjacent to each other, sides extending in parallel with the plurality of pillar regions are formed at an identical pitch with the plurality of pillar regions, and
• at least one of the plurality of withstand voltage holding structures which are formed at the identical pitch with the plurality of pillar regions is formed to project outside the plurality of pillar regions.

A semiconductor device, comprising:

• a semiconductor substrate;
• a drift layer of a first conductivity type formed on the semiconductor substrate;
• a plurality of pillar regions of a second conductivity type formed in the drift layer;
• a surface electrode formed on the drift layer including the plurality of pillar regions;
• and
• a plurality of withstand voltage holding structures of a second conductivity type formed in a surface layer of the drift layer including the plurality of pillar regions to surround an active region, wherein
• each of the plurality of pillar regions has a linear shape extending in parallel with each other and provided to have a striped shape extending in parallel with a direction of an off-angle of the semiconductor substrate,
• each of the plurality of withstand voltage holding structures has a frame-like shape including sides extending in parallel with the plurality of pillar regions and sides perpendicular to the plurality of pillar regions in a planar view, and
• at least one of the plurality of pillar regions has an intermissive linear shape with a disconnection in a region where the plurality of withstand voltage holding structures are not formed.