Stacked III-V semiconductor diode
Assignee3-5 Power Electronics GmbH
InventorVolker Dudek
Life of this patent
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Abstract
A stacked III-V semiconductor diode having an n− layer having a first surface, a second surface, a dopant concentration of 1012 N/cm3 to 1017 N/cm3 and a layer thickness of 50 μm to 1,000 μm, a p+ layer, which is integrally connected to the first surface and has a dopant concentration of 5·1018 N/cm3 to 5·1020 N/cm3, an n+ layer, which is integrally connected to the second surface and has a dopant concentration of at least 1019 N/cm3. The p+ layer, the n− layer and the n+ layer each having a monolithic design and each being made up of a GaAs compound. The dopant concentration of the n− layer having a first value on the first surface and a second value on the second surface, and the second value of the dopant concentration being greater than the first value at least by a factor between 1.5 and 2.5.
Claims16
A stacked III-V semiconductor diode comprising:
- a n− layer having a first surface, a second surface opposite the first surface, a dopant concentration of 1012 N/cm3 to 1017 N/cm3 and a layer thickness of 50 μm to 1,000 μm;
- a p+ layer integrally connected to the first surface of the n− layer or an intermediate layer disposed between the n− layer and the p+ layer, the p+ layer having a dopant concentration of 5·1018 N/cm3 to 5·1020 N/cm3;
- a n+ layer integrally connected to the second surface if the n− layer has a dopant concentration of at least 1019 N/cm3,
- wherein the p+ layer, the n− layer and the n+ layer each have a monolithic design and include a GaAs compound or consist of a GaAs compound, the n− layer being a GaAs layer,
- wherein the n+ layer or the p+ layer is a substrate layer,
- wherein the dopant concentration of the n− layer has a first value on the first surface formed in a direction of the p+ layer and a second value on the second surface adjacent to the n+ layer, and
- wherein the second value of the dopant concentration is greater than the first value by a factor of at least 1.5 or by a factor of at least 2 or by a factor of at least 2.5.
A stacked III-V semiconductor diode comprising:
- a n− layer having a first surface, a second surface opposite the first surface, a dopant concentration of 1012 N/cm3 to 1017 N/cm3 and a layer thickness of 50 μm to 1,000 μm;
- a p+ layer integrally connected to the first surface of the n− layer or an intermediate layer disposed between the n− layer and the p+ layer, the p+ layer having a dopant concentration of 5·1018 N/cm3 to 5·1020 N/cm3;
- a n+ layer integrally connected to the second surface if the n− layer has a dopant concentration of at least 1019 N/cm3,
- wherein the p+ layer, the n− layer and the n+ layer each have a monolithic design and include a GaAs compound or consist of a GaAs compound,
- wherein the n+ layer or the p+ layer is a substrate layer,
- wherein the dopant concentration of the n− layer has a first value on the first surface formed in a direction of the p+ layer and a second value on the second surface adjacent to the n+ layer,
- wherein the second value of the dopant concentration is greater than the first value by a factor of at least 1.5 or by a factor of at least 2 or by a factor of at least 2.5, and
- wherein an intermediate layer is formed between the p+ layer and the n− layer.
A stacked III-V semiconductor diode comprising:
- a n− layer having a first surface, a second surface opposite the first surface, a dopant concentration of 1012 N/cm3 to 1017 N/cm3 and a layer thickness of 50 μm to 1,000 μm;
- a p+ layer integrally connected to the first surface of the n− layer or an intermediate layer disposed between the n− layer and the p+ layer, the p+ layer having a dopant concentration of 5˜1018 N/cm3 to 5·1020 N/cm3;
- a n+ layer integrally connected to the second surface if the n− layer has a dopant concentration of at least 1019 N/cm3,
- wherein the p+ layer, the n− layer and the n+ layer each have a monolithic design and the n− layer being a GaAs layer,
- wherein the n+ layer or the p+ layer is a substrate layer,
- wherein the dopant concentration of the n− layer has a first value adjacent to the first surface and a second value on the second surface adjacent to the n+ layer, and
- wherein the second value of the dopant concentration is greater than the first value by a factor of at least 1.5 or by a factor of at least 2 or by a factor of at least 2.5.
Dependencies are inferred from the claim text.