FINFET based junctionless wrap around structure

A method of forming an integrated circuit device comprising:

• forming a trench in a dielectric layer on a substrate, the trench comprising dimensions for a transistor body including a width;
• forming a channel material in the trench;
• recessing the dielectric layer to expose a first portion of the channel material;
• increasing a width dimension of the exposed channel material;
• recessing the dielectric layer to expose a second portion of the channel material;
• removing the second portion of the channel material;
• and
• forming a gate stack on the first portion of the channel material, the gate stack comprising a gate dielectric and a gate electrode.

A method comprising:

• forming a fin in or on a substrate, the fin comprising a length dimension and a width dimension and projecting a height dimension above a surface of the substrate;
• forming a dielectric material on opposite sides of the fin along the length dimension, wherein a first portion of the fin is disposed above a surface of the dielectric material;
• increasing a width dimension of the fin;
• after increasing a width dimension of the fin, recessing the dielectric material to expose a second portion of the fin;
• removing the second portion of the fin;
• and
• forming a gate electrode on the first portion of the fin.