Semiconductor device with fin and related methods
AssigneeSTMicroelectronics S.r.l.
InventorsPierre Morin, Nicolas Loubet
Life of this patent
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Abstract
A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.
Claims20
A device, comprising:
- a substrate;
- a dielectric layer over the substrate;
- a channel region over the dielectric layer, the channel region extending in a first direction;
- a gate structure overlapping the channel region, the gate structure extending along a second direction that is at an oblique angle to the first direction;
- and
- a source region and a drain region on opposite sides of the channel region, the source region and the drain region extending in the second direction and contacting sidewalls of the channel region and sidewalls of the dielectric layer.
A device, comprising:
- a substrate;
- a dielectric layer over the substrate;
- a plurality of channel regions over the dielectric layer, the plurality of channel regions each extending in a first direction;
- a plurality of gate structures each overlapping a corresponding channel region of the plurality of channel regions, the plurality of gate structures each extending along a second direction that is at an oblique angle to the first direction;
- and
- source and drain regions between the plurality of gate structures, the source and drain regions extending in the second direction from a surface of the substrate.
A structure, comprising:
- a substrate;
- a dielectric layer over the substrate;
- a semiconductor fin over the dielectric layer, the semiconductor fin extending in a first direction;
- a gate structure over the semiconductor fin, the gate structure extending in a second direction that is canted with respect to the first direction;
- two recesses on opposite sides of the gate structure, the two recesses each extending into the dielectric layer toward the substrate;
- and
- an epitaxial semiconductor layer in each of the two recesses.
Dependencies are inferred from the claim text.