Semiconductor device having first and second epitaxial materials
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLilly SU, Pang-Yen Tsai, Tze-Liang Lee, Chii-Horng Li, Yen-Ru Lee, Ming-Hua Yu
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Abstract
A semiconductor device includes a first gate stack over a substrate. The semiconductor device further includes a first epitaxial (epi) material in the substrate on a first side of the first gate stack. The first epi material includes a first upper surface having a first crystal plane. The semiconductor device further includes a second epi material in the substrate on a second side of the first gate stack opposite the first side. The second epi material includes a second upper surface having a second crystal plane, and the first crystal plane is different from the second crystal plane.
Claims20
A semiconductor device, comprising:
- a first gate stack over a substrate;
- a first epitaxial (epi) material in the substrate, wherein the first epi material includes a first upper surface having a first crystal plane, and a first lower surface of the first epi material has a second crystal plane;
- and
- a second epi material on the first epi material, wherein the second epi material includes a second upper surface having the second crystal plane, and the first crystal plane is different from the second crystal plane.
A semiconductor device comprising:
- a first gate stack over a substrate;
- a strained source/drain (S/D) feature in the substrate, wherein the strained S/D feature is adjacent the first gate stack, wherein the strained S/D feature comprises:
- a first epitaxial (epi) material in the substrate, wherein the first epi material includes a first upper surface having a first crystal plane, and the first epi material includes a first lower surface having a second crystal plane different from the first crystal plane;
- and
- a second epi material over the first epitaxial material, wherein the second epi material includes a second upper surface having a third crystal plane different from the first crystal plane.
A semiconductor device, comprising:
- a first gate stack over a substrate;
- a first epitaxial (epi) material in the substrate, wherein a first upper surface of the first epi material has a (111) crystal plane;
- and
- a second epi material on the first epi material, wherein a second upper surface of the second epi material has a (311) crystal plane.
Dependencies are inferred from the claim text.