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US 10,854,746 B2Granted
Channel conductivity in memory structures
AssigneeIntel Corporation
InventorsPrashant Majhi, Khaled Hasnat, Krishna Parat
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Abstract
A memory structure can include a conductive channel, a charge storage structure adjacent to the conductive channel, and a strain-inducing layer adjacent to the conductive channel on a side opposite the charge storage structure. The strain-inducing layer can have a higher coefficient of thermal expansion (CTE) than the conductive channel.
Claims21
A memory structure, comprising:
- a conductive channel;
- a charge storage structure adjacent to the conductive channel;
- and
- a strain-inducing layer adjacent to the conductive channel on a side opposite the charge storage structure, wherein the strain-inducing layer comprises at least one selected from a group consisting of silicon nitride, doped silicon nitride, doped silicon, silicon germanium, or a combination thereof;
- wherein the strain-inducing layer comprises a dopant in an amount of from about 1 wt % to about 25 wt %;
- wherein the strain-inducing layer is doped with oxygen in an amount of from about 5 wt % to about 20 wt %.
3 more elements
Dependencies are inferred from the claim text.