Phase modulators based on ambipolar field-effect transistors
AssigneeThe Florida State University Research Foundation, Inc.
InventorsNihar R. Pradhan, Stephen A. Mcgill
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Abstract
Systems and methods for providing a phase modulator. The methods comprise creating a Field Effect Transistor (FET) by: placing a crystal structure displaying ambipolarity on a substrate comprising an oxide layer and a conductive silicon layer, the conductive silicon layer providing a gating electrical contact for the phase modulator, and forming source and drain electrical contacts on the crystal structure using e-beam lithography and an e-beam evaporator. The methods also comprising: annealing the FET to improve an interface between the crystal structure and the source and drain electrical contacts; and coating the FET with a dielectric layer to reduce or eliminate hysteresis so that a functionality of the phase modulator is improved.
Claims22
A method for providing a phase modulator, comprising:
- creating a Field Effect Transistor (“FET”) by
- placing a crystal structure displaying ambipolarity on a substrate comprising an oxide layer and a conductive silicon layer, the conductive silicon layer providing a gating electrical contact for the phase modulator, and
- forming source and drain electrical contacts on the crystal structure using e-beam lithography and an e-beam evaporator;
- annealing the FET to improve an interface between the crystal structure and the source and drain electrical contacts;
- and
- coating the FET with a dielectric layer to reduce or eliminate hysteresis so that a functionality of the phase modulator is improved.
A Field Effect Transistor (“FET”), comprising:
- a substrate comprising an oxide layer and a conductive silicon layer, the conductive silicon layer providing a gating electrical contact for a phase modulator;
- a crystal structure placed on the substrate and displaying ambipolarity;
- and
- source and drain electrical contacts formed on the crystal structure using e-beam lithography and an e-beam evaporator;
- wherein the FET is annealed to improve an interface between the crystal structure and the source and drain electrical contacts, and coated with a dielectric layer to reduce or eliminate hysteresis so that a functionality of the phase modulator is improved.
Dependencies are inferred from the claim text.