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US 10,854,737 B2Granted
Plasma treatment on metal-oxide TFT
AssigneeApplied Materials, Inc.
InventorsSoo Young Choi, Beom Soo Park, Yi Cui, Tae Kyung Won, Dong-Kil Yim
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Abstract
Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.
Claims20
A method of forming a thin film transistor, comprising:
- depositing a barrier layer over a substrate;
- depositing a metal oxide layer on the barrier layer;
- depositing a gate insulator layer on the metal oxide layer;
- exposing the gate insulator layer to an inert plasma;
- depositing a conductive layer over the gate insulator layer;
- patterning the conductive layer to form a gate electrode;
- depositing an inter-layer dielectric (ILD) over the gate electrode;
- and
- patterning the ILD to form a source electrode and a drain electrode, wherein the gate insulator layer is exposed to the inert plasma during a power lift operation.
6 more elements
A method of forming a thin film transistor, comprising:
- depositing a barrier layer over a substrate;
- depositing a metal oxide layer on the barrier layer;
- depositing a gate insulator layer on the metal oxide layer;
- exposing the gate insulator layer to an inert plasma after depositing the gate insulator layer;
- depositing a conductive layer over the gate insulator layer;
- patterning the conductive layer to form a gate electrode;
- depositing an inter-layer dielectric (ILD) over the gate electrode;
- and
- patterning the ILD to form a source electrode and a drain electrode, wherein the inert plasma is an argon plasma or a helium plasma, wherein the gate insulator layer is exposed to the inert plasma during a power lift operation.
6 more elements
A method of forming a thin film transistor, comprising:
- positioning a substrate on a substrate support in a processing chamber, wherein the substrate has a barrier layer and a metal oxide layer formed over the substrate;
- depositing a gate insulator layer over the metal oxide layer and the barrier layer, wherein depositing the gate insulator layer comprises igniting a plasma at a first RF power;
- and
- power-lifting the processed substrate from the substrate support, wherein power-lifting the substrate comprises:
- exposing the substrate to an inert gas plasma, wherein the inert gas plasma is formed at a second RF power less than the first RF power.
2 more elements
Dependencies are inferred from the claim text.