Method for forming semiconductor structure with contact over source/drain structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAndrew Joseph Kelly, Yusuke Oniki
Life of this patent
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Abstract
Methods for manufacturing semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a source/drain structure over a substrate and forming a metal layer over the source/drain structure. The method for manufacturing a semiconductor structure further includes reacting a portion of the metal layer with the source/drain structure to form a metallic layer by using an etching solvent. In addition, the etching solvent includes (a) a first component and (b) a second component. The first component includes an acid, and the second component includes propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), or a combination thereof.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- forming a source/drain structure over a substrate;
- forming a metal layer over the source/drain structure;
- reacting a portion of the metal layer with the source/drain structure to form a metallic layer;
- etching an unreacted portion of the metal layer by using an etching solvent, wherein the etching solvent comprises
- a first component, comprising an acid;
- and
- a second component, comprising propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), or a combination thereof;
- and
- forming an oxide film on a sidewall of the source/drain structure, wherein the oxide film is in direct contact with the sidewall of the source/drain structure and vertically overlaps the metallic layer, and the metallic layer is in direct contact with a top surface of the source/drain structure.
A method for manufacturing a semiconductor structure, comprising:
- forming a source/drain structure over a substrate;
- forming a metal layer over the source/drain structure;
- reacting a portion of the metal layer with the source/drain structure to form a metallic layer;
- and
- forming an oxide film on a sidewall of the source/drain structure by using a solvent, wherein the solvent comprises
- a first component, comprising an acid;
- and
- a second component, comprising propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), or a combination thereof,
- wherein the oxide film is in direct contact with the sidewall of the source/drain structure and the metallic layer is in direct contact with a top surface of the source/drain structure.
A method for manufacturing a semiconductor structure, comprising:
- forming a source/drain structure over a substrate;
- forming a metal layer over the source/drain structure;
- reacting a portion of the metal layer with the source/drain structure to form a metallic layer over the source/drain structure, wherein the metallic layer is in direct contact with a top surface of the source/drain structure;
- forming an oxide film on a sidewall of the source/drain structure by using a solvent, wherein the oxide film is in direct contact with the sidewall of the source/drain structure, and wherein the solvent comprises
- a first component, comprising an acid;
- a second component, comprising propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), or a combination thereof;
- and
- a third component, comprising H2O2 or ozone;
- forming an interlayer dielectric layer covering the metallic layer;
- and
- forming a contact through the interlayer dielectric layer and in direct contact with the metallic layer.
Dependencies are inferred from the claim text.