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US 10,854,735 B2Granted
Method of forming transistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJean-Pierre Colinge, Carlos H. Diaz
Life of this patent
Estimating the term…
Abstract
According to another embodiment, a method of forming a transistor is provided. The method includes the following operations: providing a substrate; providing a source over the substrate; providing a channel connected to the source; providing a drain connected to the channel; providing a gate insulator adjacent to the channel; providing a gate adjacent to the gate insulator; providing a first interlayer dielectric between the source and the gate; and providing a second interlayer dielectric between the drain and the gate, wherein at least one of the formation of the source, the drain, and the channel includes about 20-95 atomic percent of Sn.
Claims19
A vertical transistor structure, comprising:
- a substrate;
- a source made of GeSn;
- a drain made of GeSn;
- a channel made of GeSn interposed between the source and the drain, wherein the source, the drain, and the channel are stacked in a vertical direction relative to the substrate, the vertical direction being perpendicular to a cross-sectional area of the channel, the cross-sectional area of the channel being smaller than that of the source and the drain, wherein the source, the drain, and the channel form a vertical dumbbell shape, such that each of the source and the drain form an end of the vertical dumbbell shape, and the channel forms a middle portion of the vertical dumbbell shape and does not touch the substrate;
- a first junction positioned between the source and the channel, and
- a second junction positioned between the drain and the channel;
- wherein the source and the drain have a cross-sectional diameter of about 5-30 nanometers, and the channel has a cross-sectional diameter of about 1-15 nanometers;
- and
- wherein the cross-sectional diameter of the first junction continuously varies in an increasing manner from the cross-sectional diameter of the channel to the cross-sectional diameter of the source to connect the source to the channel without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the source;
- and
- wherein the cross-sectional diameter of the second junction continuously varies in an increasing manner from the cross-sectional diameter of the channel to the cross-sectional diameter of the drain to connect the drain to the channel without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the drain;
- wherein the cross-sectional diameter of the first junction closest to the channel is equal to the cross-sectional diameter of the channel closest to the first junction;
- and wherein the cross-sectional diameter of the second junction closest to the channel is equal to the cross-sectional diameter of the channel closest to the second junction;
- wherein at least a portion of the source and at least a portion of the drain have a cross-sectional diameter that varies in a vertical direction such that a portion of the source and drain closest to the substrate is different than a portion of the source and drain furthest from the substrate;
- and
- wherein each of the source, the drain, and the channel contains a same atomic percent of Sn that is about 20-95 atomic percent.
13 more elements
A vertical transistor structure, comprising:
- a substrate;
- a source made of SiSn;
- a drain made of SiSn;
- a channel made of SiSn interposed between the source and the drain, wherein the source, the drain, and the channel are stacked in a vertical direction relative to the substrate, the vertical direction being perpendicular to a cross-sectional area of the channel, the cross-sectional area of the channel being smaller than that of the source and the drain, wherein the source, the drain, and the channel form a dumbbell shape, such that each of the source and the drain form an end of the dumbbell shape, and the channel forms a middle portion of the dumbbell shape and does not touch the substrate;
- a first junction positioned between the source and the channel, and
- a second junction positioned between the drain and the channel;
- and
- wherein the cross-sectional diameter of the first junction continuously varies in an increasing manner from the cross-sectional diameter of the channel to the cross-sectional diameter of the source to connect the source to the channel without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the source;
- and
- wherein the cross-sectional diameter of the second junction continuously varies in an increasing manner from the cross-sectional diameter of the channel to the cross-sectional diameter of the drain to connect the drain to the channel without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the drain;
- wherein the cross-sectional diameter of the first junction closest to the channel is equal to the cross-sectional diameter of the channel closest to the first junction;
- and wherein the cross-sectional diameter of the second junction closest to the channel is equal to the cross-sectional diameter of the channel closest to the second junction;
- wherein at least a portion of the source and at least a portion of the drain have a cross-sectional diameter that varies in a vertical direction such that a portion of the source and drain closest to the substrate is different than a portion of the source and drain furthest from the substrate;
- and
- wherein each of the source, the drain, and the channel contains a same atomic percent of Sn that is about 20-95 atomic percent.
12 more elements
A vertical transistor structure, comprising:
- a substrate;
- a source made of SiGeSn;
- a drain made of SiGeSn;
- a channel made of SiGeSn interposed between the source and the drain, wherein the source, the drain, and the channel are stacked in a vertical direction relative to the substrate, the vertical direction being perpendicular to a cross-sectional area of the channel, the cross-sectional area of the channel being smaller than that of the source and the drain, wherein the source, the drain, and the channel form a dumbbell shape, such that each of the source and the drain form an end of the dumbbell shape, and the channel forms a middle portion of the dumbbell shape and does not touch the substrate;
- a first junction positioned between the source and the channel, and
- a second junction positioned between the drain and the channel;
- and
- wherein the cross-sectional diameter of the first junction continuously varies in an increasing manner from the cross-sectional diameter of the channel to the cross-sectional diameter of the source to connect the source to the channel without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the source;
- and
- wherein the cross-sectional diameter of the second junction continuously varies in an increasing manner from the cross-sectional diameter of the channel to the cross-sectional diameter of the drain to connect the drain to the channel without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the drain;
- wherein at least a portion of the source has a cross-sectional diameter that continuously varies in a vertical direction such that a portion of the source closest to the substrate is different than a portion of the source furthest from the substrate and in an increasing manner from the cross-sectional diameter of the first junction to the cross-sectional diameter of the portion of the source furthest from the first junction without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the source;
- and
- wherein at least a portion of the drain has a cross-sectional diameter that continuously varies in a vertical direction such that a portion of the drain closest to the substrate is different than a portion of the drain furthest from the substrate and in an increasing manner from the cross-sectional diameter of the second junction to the cross-sectional diameter of the portion of the drain furthest from the first junction without a stepwise transition between the cross-sectional diameter of the channel and the cross-sectional diameter of the drain;
- and
- wherein each of the source, the drain, and the channel contains a same atomic percent of Sn that is about 20-95 atomic percent.
12 more elements
Dependencies are inferred from the claim text.