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US 10,854,730 B2Granted
Semiconductor device and method of manufacturing thereof
AssigneeRenesas Electronics Corporation
InventorsDigh Hisamoto, Yoshiyuki Kawashima
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Abstract
A part of the semiconductor substrate is processed to form fins protruding from the upper surface of the semiconductor substrate. Next, an interlayer insulating film is formed on the semiconductor substrate including the fin FA, and an opening is formed in the interlayer insulating film. Next, a dummy pattern including the dummy material and the insulating film is formed in the opening in a self-aligned manner. Thereafter, the dummy pattern is replaced with a memory gate electrode, a control gate electrode, and the like.
Claims17
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) providing a semiconductor substrate;
- (b) forming a first interlayer insulating film on the semiconductor substrate;
- (c) forming a first opening in the first interlayer insulating film;
- (d) forming a dummy pattern inside the first opening;
- (e) removing a part of the dummy pattern;
- (f) after the step (e), filling the first opening from which the part of the dummy pattern is removed with a first gate electrode;
- (g) after the step (f), removing the dummy pattern remained in the first opening in the step (e);
- and
- (h) filling the first opening from which the dummy pattern is removed in the step (g) with a second gate electrode.
6 more elements
Dependencies are inferred from the claim text.