High power gallium nitride electronics using miscut substrates
AssigneeNexgen Power Systems, Inc.
InventorsIsik C. Kizilyalli, Dave P. Bour, Thomas R. Prunty, Gangfeng Ye
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Abstract
A method of fabricating an electronic device includes providing a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the <0001> direction of between 0.15° and 0.65°. The method also includes growing a first III-V epitaxial layer coupled to the III-V substrate and growing a second III-V epitaxial layer coupled to the first III-V epitaxial layer. The method further includes forming a first contact in electrical contact with the III-V substrate and forming a second contact in electrical contact with the second III-V epitaxial layer.
Claims18
A field effect transistor comprising:
- a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the <0001> direction towards the <1100> direction by an angle ranging between −0.3° and −0.6° and towards the <1120> direction by an angle ranging between −0.1° and −0.2°;
- a first epitaxial layer coupled to the III-V substrate;
- a second epitaxial layer coupled to the first epitaxial layer;
- one or more recessed regions extending into the second epitaxial layer, wherein each of the one or more recessed regions defines a sidewall surface in the second epitaxial layer and a lateral surface, wherein a doped region extends into the sidewall surface and the lateral surface;
- a drain contact in electrical contact with the III-V substrate;
- a source contact in electrical contact with the second epitaxial layer;
- and
- a gate contact in electrical contact with the doped region.
Dependencies are inferred from the claim text.