Atomic layer deposition methods and structures thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yi Lee, Cheng-Yen Tsai, Da-Yuan Lee
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Abstract
A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.
Claims20
A method of semiconductor device fabrication, comprising:
- depositing a work-function metal layer over a gate dielectric layer;
- performing a fluorine-based treatment of the work-function metal layer to remove a surface oxide layer of the work-function metal layer, wherein the fluorine-based treatment includes inducing a thermal chemical reaction to remove the surface oxide layer by soaking the work-function metal layer in a precursor including at least one of TiFx and WFx;
- and
- after removing the surface oxide layer of the work-function metal layer, depositing an N-metal layer over the work-function metal layer.
A method comprising:
- forming a work-function metal layer over a gate dielectric layer;
- and
- applying a treatment to the work-function metal layer to remove an oxide layer of the work-function metal layer, wherein the treatment includes soaking the work-function metal layer in a precursor that includes TiFx.
A method of semiconductor device fabrication, comprising:
- depositing a work-function metal layer over a gate stack;
- and
- applying a treatment to the work-function metal layer to remove an oxide layer of the work-function metal layer, wherein the treatment includes soaking the work-function metal layer in a precursor including TiFx.
Dependencies are inferred from the claim text.